參數(shù)資料
型號(hào): HR1F3P
廠商: NEC Corp.
英文描述: On-chip resistor PNP silicon epitaxial transistor For mid-speed switching
中文描述: 片上電阻進(jìn)步黨硅外延晶體管中速開(kāi)關(guān)
文件頁(yè)數(shù): 1/6頁(yè)
文件大?。?/td> 120K
代理商: HR1F3P
2002
Document No. D16184EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
COMPOUND TRANSISTOR
HR1 SERIES
on-chip resistor PNP silicon epitaxial transistor
For mid-speed switching
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
FEATURES
Up to 2A high current drives such as IC outputs and actuators
available
On-chip bias resistor
Low power consumption during drive
HR1 SERIES LISTS
Products
Marking
R
1
(K
)
R
2
(K
)
HR1A3M
MP
1.0
1.0
HR1F3P
MQ
2.2
10
HR1L3N
MR
4.7
10
HR1A4,
MS
10
10
HR1L2Q
MT
0.47
4.7
HR1F2Q
MU
0.22
2.2
HR1A4A
MX
10
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°
C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
60
60
10
1.0
2.0
0.02
V
Collector to emitter voltage
V
CEO
V
Emitter to base voltage
V
EBO
V
Collector current (DC)
I
C(DC)
A
Collector current (Pulse)
I
C(pulse)
*
A
Base current (DC)
I
B(DC)
A
Total power dissipation
P
T
**
2.0
W
°
C
°
C
Junction temperature
T
j
150
Storage temperature
T
stg
55 to +150
* PW
10 ms, duty cycle
50 %
**When 0.7 mm
×
16 cm
2
ceramic board is used
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