參數(shù)資料
型號: HR1xxx
廠商: NEC Corp.
英文描述: On-chip resistor PNP silicon epitaxial transistor For mid-speed switching
中文描述: 片上電阻進步黨硅外延晶體管中速開關(guān)
文件頁數(shù): 3/6頁
文件大?。?/td> 120K
代理商: HR1XXX
HR1 SERIES
°
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
=
60 V, I
E
= 0
100
nA
DC current gain
h
FE1
**
V
CE
=
2.0 V, I
C
=
0.1 A
150
DC current gain
h
FE2
**
V
CE
=
2.0 V, I
C
=
0.5 A
100
DC current gain
h
FE3
**
V
CE
=
2.0 V, I
C
=
1.0 A
50
Low level output voltage
V
OL
**
V
IN
=
5.0 V, I
C
=
0.1 A
0.2
V
Low level input voltage
V
IL
**
V
CE
=
5.0 V, I
C
=
100
μ
A
0.3
V
Input resistance
R
1
7
10
13
k
k
E-to-B resistance
R
2
7
10
13
μ
°
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
=
60 V, I
E
= 0
100
nA
DC current gain
h
FE1
**
V
CE
=
2.0 V, I
C
=
0.1 A
150
DC current gain
h
FE2
**
V
CE
=
2.0 V, I
C
=
0.5 A
100
DC current gain
h
FE3
**
V
CE
=
2.0 V, I
C
=
1.0 A
50
Low level output voltage
V
OL
**
V
IN
=
5.0 V, I
C
=
0.5 A
0.55
V
Low level input voltage
V
IL
**
V
CE
=
5.0 V, I
C
=
100
μ
A
0.3
V
Input resistance
R
1
329
470
611
E-to-B resistance
R
2
3.29
4.7
6.11
k
μ
°
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
=
60 V, I
E
= 0
100
nA
DC current gain
h
FE1
**
V
CE
=
2.0 V, I
C
=
0.1 A
100
DC current gain
h
FE2
**
V
CE
=
2.0 V, I
C
=
0.5 A
100
DC current gain
h
FE3
**
V
CE
=
2.0 V, I
C
=
1.0 A
50
Low level output voltage
V
OL
**
V
IN
=
5.0 V, I
C
=
0.5 A
V
CE
=
5.0 V, I
C
=
100
μ
A
0.55
0.3
V
Low level input voltage
V
IL
**
V
Input resistance
R
1
154
220
286
k
E-to-B resistance
R
2
1.54
2.2
2.86
k
μ
相關(guān)PDF資料
PDF描述
HR1A4M HR1 Series Data Sheet | Data Sheet[04/2002]
HR1A3M On-chip resistor PNP silicon epitaxial transistor For mid-speed switching
HR1A4 On-chip resistor PNP silicon epitaxial transistor For mid-speed switching
HR1A4A On-chip resistor PNP silicon epitaxial transistor For mid-speed switching
HR1F2Q On-chip resistor PNP silicon epitaxial transistor For mid-speed switching
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