參數(shù)資料
型號(hào): HRF302A
廠商: Hitachi,Ltd.
英文描述: Silicon Schottky Barrier Diode for Rectifying(用于整流的肖特基勢(shì)壘二極管)
中文描述: 硅肖特基二極管整頓(用于整流的肖特基勢(shì)壘二極管)
文件頁(yè)數(shù): 2/5頁(yè)
文件大小: 32K
代理商: HRF302A
HRF302A
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Value
Unit
Repetitive peak reverse
voltage
V
RRM
*1
20
V
Average rectified current
I
o
I
FSM
*1
3
A
Non-Repetitive peak
forward surge current
*2
100
A
Junction temperature
Tj
125
°C
Storage temperature
Notes: 1. See from Fig.4 to Fig.7
2. 10msec half sine wave 1 pulse
Tstg
–40 to +125
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Forward voltage
V
F
I
R
0.40
V
I
F
= 3A
V
R
= 20V
C = 200pF , R = 0
, Both forward and
reverse direction 1 pulse.
Reverse current
1.0
mA
ESD-Capability
250
V
Thermal resistance
Rth(j-a)
100
°C/W Glass epoxy board
*1
Rth(j-c)
34
Tc = 25°C
Note:
1. Glass epoxy board
6.8
Unit: mm
2.0
3.5
Land size
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HRF32 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon Schottky Barrier Diode for Rectifying
HRF3205 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HRF3205_NL 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述:
HRF3205_Q 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HRF3205F102 制造商:Fairchild Semiconductor Corporation 功能描述: