參數(shù)資料
型號: HRF32
廠商: Hitachi,Ltd.
英文描述: Silicon Schottky Barrier Diode for Rectifying
中文描述: 硅肖特基二極管整頓
文件頁數(shù): 2/6頁
文件大小: 30K
代理商: HRF32
HRF32
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Value
Unit
Repetitive peak reverse
voltage
V
RRM
*1
90
V
Average rectified current
I
o
I
FSM
*1
1.0
A
Non-Repetitive peak
forward surge current
*2
20
A
Junction temperature
Tj
125
°
C
°
C
Storage temperature
Note:
1. See from Fig.4 to Fig.7
Note:
2. 10msec half sine wave 1 pulse
Tstg
-40 to +125
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Forward voltage
V
F
I
R
0.8
V
I
F
= 1.0A
V
R
= 90V
C=200pF ,
R=0
, Both forward and reverse
direction 1 pulse.
Reverse current
1.0
mA
ESD-Capability
150
V
Thermal resistance
Rth(j-a)
108
°
C/W
Alumina board
*1
157
Print board
*2
Note:
1. Alumina board
2
(25mm ~25mm ~0.64t
2.0mm
4.2mm
Note:
2. Print board
2
(25mm ~25mm ~1.64t
2.0mm
4.2mm
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