- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371888 > HS2-2622RH-Q (INTERSIL CORP) Radiation Hardened, Very Wideband, High Input Impedance Uncompensated Operational Amplifiers PDF資料下載
參數(shù)資料
| 型號： | HS2-2622RH-Q |
| 廠商： | INTERSIL CORP |
| 元件分類： | 運動控制電子 |
| 英文描述： | Radiation Hardened, Very Wideband, High Input Impedance Uncompensated Operational Amplifiers |
| 中文描述： | OP-AMP, 100 MHz BAND WIDTH, MBCY8 |
| 封裝： | METAL CAN-8 |
| 文件頁數(shù)： | 5/5頁 |
| 文件大?。?/td> | 78K |
| 代理商： | HS2-2622RH-Q |
5
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
http://www.intersil.com
Die Characteristics
DIE DIMENSIONS:
69 mils x 66 mils x 19 mils
±
1 mil
1750
μ
m x 1420
μ
m x 483
μ
m
±
25.4
μ
m
INTERFACE MATERIALS:
Glassivation:
Type: Nitride (S13N4) over Silox (SiO2, 5% Phos.)
Silox Thickness: 12k
±
2k
Nitride Thickness: 3.5k
±
1.5k
Top Metallization:
Type: Al, 1% Cu
Thickness: 18k
±
2k
Substrate:
Linear Bipolar, DI
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION:
Substrate Potential
(Powered Up)
:
Unbiased
ADDITIONAL INFORMATION:
Worst Case Current Density:
<2 x 10
5
A/cm
2
Transistor Count:
HS-2620RH: 140
HS-2622RH: 140
Metallization Mask Layout
HS-2620RH, HS-2622RH
BAL
-IN
+IN
V-
BAL
OUT
V+
COMP
HS-2620RH, HS-2622RH
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HS7-2622RH-Q | Radiation Hardened, Very Wideband, High Input Impedance Uncompensated Operational Amplifiers |
| HS7B-2622RH-Q | Radiation Hardened, Very Wideband, High Input Impedance Uncompensated Operational Amplifiers |
| HS-2620RH | Radiation Hardened, Very Wideband, High Input Impedance Uncompensated Operational Amplifiers(抗輻射、寬帶、高輸入阻抗、低輸入偏置電流非補償性運算放大器) |
| HS-2622RH | Radiation Hardened, Very Wideband, High Input Impedance Uncompensated Operational Amplifiers(抗輻射、寬帶、高輸入阻抗、低輸入偏置電流非補償性運算放大器) |
| HS2-2620RH-Q | Radiation Hardened, Very Wideband, High Input Impedance Uncompensated Operational Amplifiers |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HS2262A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:HS2262A CMOS |
| HS2262D-R0 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:HS2262A CMOS |
| HS2262D-R2 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:HS2262A CMOS |
| HS2262D-R4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:HS2262A CMOS |
| HS2262D-R6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:HS2262A CMOS |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。