參數(shù)資料
型號(hào)： HS9-1840RH-8
廠(chǎng)商： Harris Corporation
英文描述： Rad-Hard 16 Channel CMOS Analog Rad-Hard 16 Channel CMOS Analog
中文描述： 抗輻射16通道CMOS模擬抗輻射16通道CMOS模擬
文件頁(yè)數(shù)： 4/13頁(yè)
文件大?。?/td> 193K
代理商： HS9-1840RH-8
4
Specifications HS-1840RH
Leakage Current from
an “On” Driver into the
Switch (Drain & Source)
+ID(ON)
VS = +10V, VD = +10V, VEN =
0.8V All Unused Inputs = -10V
1
+25
o
C
-10
10
nA
2, 3
+125
o
C, -55
o
C
-100
100
nA
-ID(ON)
VS = -10V, VD = -10V, VEN =
0.8V, All Unused Inputs = +10V
1
+25
o
C
-10
10
nA
2, 3
+125
o
C, -55
o
C
-100
100
nA
Switch On Resistance
+15V R(ON)
VS = +15V, ID = -1mA,
VEN = 0.8V
1, 2, 3
-55
o
C, +25
o
C,
+125
o
C
50
1000
-5V R(ON)
VS = -5V, ID = +1mA, VEN = 0.8V
1, 2, 3
-55
o
C, +25
o
C,
+125
o
C
50
4000
+5V R(ON)
VS = +5V, ID = -1mA, VEN = 0.8V
1, 2, 3
-55
o
C, +25
o
C,
+125
o
C
50
2500
Positive Supply
Current
I(+)
VEN = 0.8V
1, 2, 3
-55
o
C, +25
o
C,
+125
o
C
-
0.5
mA
Negative Supply
Current
I(-)
VEN = 0.8V
1, 2, 3
-55
o
C, +25
o
C,
+125
o
C
-0.5
-
mA
Positive Standby
Supply Current
+ISBY
VEN = 4.0V
1, 2, 3
-55
o
C, +25
o
C,
+125
o
C
-
0.5
mA
Negative Standby
Supply Current
-ISBY
VEN = 4.0V
1, 2, 3
-55
o
C, +25
o
C,
+125
o
C
-0.5
-
mA
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Guaranteed and 100% Tested. Unless Otherwise Specified: V- = -15V, V+ = +15V, VREF = +5V, VAH = +4.0V, VAL = 0.8V
PARAMETER
SYMBOL
CONDITIONS
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Break-Before-Make
Time Delay
TD
RL = 1000
, CL = 50pF
9
+25
o
C
25
-
ns
10, 11
+125
o
C, -55
o
C
5
-
ns
Propagation Delay
Times: Address Inputs
to I/O Channels
TON(A),
TOFF(A)
RL = 10k
, CL = 50pF
9
+25
o
C
-
600
ns
10, 11
+125
o
C, -55
o
C
-
1000
ns
Enable to I/O
TON(EN),
TOFF(EN)
RL = 1000
, CL = 50pF
9
+25
o
C
-
600
ns
10, 11
+125
o
C, -55
o
C
-
1000
ns
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Characterized At: V- = -15V, V+ = +15V, VREF = +5V, VAH = +4.0V, VAL = 0.8V, Unless Otherwise Specified
PARAMETER
SYMBOL
CONDITIONS
NOTE
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Capacitance Address
Input
CA
+VS = -VS = 0V, f = 1MHz
1
+25
o
C
-
7
pF
Capacitance Channel
Input
CS(OFF)
+VS = -VS = 0V, f = 1MHz
1
+25
o
C
-
5
pF
Capacitance Channel
Output
CD(OFF)
TOFF(EN)
+VS = -VS = 0V, f = 1MHz
1
+25
o
C
-
50
pF
Off Isolation
VISO
VEN = 4.0V, f = 200kHz, CL = 7pF,
RL = 1k
, VS = 3.0VRMS
1
+25
o
C
45
-
dB
NOTE: 1. The parameters listed in Table 3 are controlled via design or process parameters and not directly tested. These parameters are
characterized upon initial design and after major process and/or design changes.
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Guaranteed and 100% Tested. Unless Otherwise Specified: V- = -15V, V+ = +15V, VREF = +5V, VAH = +4.0V, VAL = 0.8V
PARAMETER
SYMBOL
CONDITIONS
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Spec Number
518022
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