參數(shù)資料
型號: HS9-4424BRH-8
廠商: INTERSIL CORP
元件分類: MOSFETs
英文描述: Radiation Hardened Dual, Non-Inverting Power MOSFET Drivers
中文描述: 2 A 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, CDFP16
封裝: CERAMIC, DFP-16
文件頁數(shù): 1/2頁
文件大?。?/td> 56K
代理商: HS9-4424BRH-8
1
File Number
4739.1
HS-4424RH, HS-4424BRH
Radiation Hardened Dual, Non-Inverting
Power MOSFET Drivers
The Radiation Hardened HS-4424RH and HS-4424BRH are
non-inverting, dual, monolithic high-speed MOSFET drivers
designed to convert TTL level signals into high current
outputs at voltages up to 18V.
The inputs of these devices are TTL compatible and can be
directly driven by our HS-1825ARH PWM device or by our
ACS/ACTS and HCS/HCTS type logic devices. The fast rise
times and high current outputs allow very quick control of
high gate capacitance power MOSFETs, like our Rad Hard
FS055, in high frequency applications.
The high current outputs minimize power losses in
MOSFETs by rapidly charging and discharging the gate
capacitance. The output stage incorporates a low voltage
lock-out circuit that puts the outputs into a three-state mode
when the supply voltage drops below 10V for the
HS-4424RH and 7.5V for the HS-4424BRH.
Constructed with the Intersil dielectrically isolated Rad Hard
Silicon Gate (RSG) BiCMOS process, these devices are
immune to Single Event Latch-up and have been specifically
designed to provide highly reliable performance in harsh
radiation environments.
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.
Detailed Electrical Specifications for these devices are
contained in SMD 5962-99560. A “hot-link” is provided
on our homepage for downloading.
www.intersil.com/spacedefense/space.asp
Pinout
HS-4424RH, HS-4424BRH (FLATPACK CDFP4-F16)
TOP VIEW
NOTE: Pins 4 and 5, 10 and 11, 12 and 13, 14 and 15 are double-
bonded to their same electrical points on the die.
Features
Electrically Screened to DESC SMD # 5962-99560
QML Qualified per MIL-PRF-38535 Requirements
Radiation Environment
- Total Dose (Max). . . . . . . . . . . . . . . . . .3 x 10
5
RAD(SI)
- Latch-Up Immune
- Low Dose Rate Immune
I
PEAK
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >2A (Min)
Matched Rise and Fall Times (C
L
= 4300pF). . .75ns (Max)
Low Voltage Lock-Out Feature
- HS-4424RH . . . . . . . . . . . . . . . . . . . . . . . . . . . < 10.0V
- HS-4424BRH . . . . . . . . . . . . . . . . . . . . . . . . . . . < 7.5V
Wide Supply Voltage Range. . . . . . . . . . . . . . .12V to 18V
Prop Delay . . . . . . . . . . . . . . . . . . . . . . . . . . .250ns (Max)
Consistent Delay Times with V
CC
Changes
Low Power Consumption
- 40mW with Inputs High
- 20mW with Inputs Low
Low Equivalent Input Capacitance. . . . . . . . . .3.2pF (Typ)
ESD Protected . . . . . . . . . . . . . . . . . . . . . . . . . . . >4000V
Applications
Switching Power Supplies
DC/DC Converters
Motor Controllers
NC
IN A
NC
GND A
GND B
NC
IN B
NC
2
3
4
5
6
7
8
1
16
15
14
13
12
11
10
9
NC
OUT A
OUT A
V
CC
V
CC
OUT B
OUT B
NC
Ordering Information
ORDERING NUMBER
INTERNAL
MKT. NUMBER
TEMP. RANGE
(
o
C)
5962F9956001VXC
HS9-4424RH-Q
-55 to 125
5962F9956001QXC
HS9-4424RH-8
-55 to 125
HS9-4424RH/Proto
HS9-4424RH/Proto
-55 to 125
5962F9956002VXC
HS9-4424BRH-Q
-55 to 125
5962F9956002QXC
HS9-4424BRH-8
-55 to 125
HS9-4424BRH/Proto
HS9-4424BRH/Proto
-55 to 125
Data Sheet
June 1999
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143
|
Copyright
Intersil Corporation 1999
相關PDF資料
PDF描述
HS9-4424BRH-Q Radiation Hardened Dual, Non-Inverting Power MOSFET Drivers
HS9-4424RH Radiation Hardened Dual, Non-Inverting Power MOSFET Drivers
HS-4424BRH Radiation Hardened Dual, Non-Inverting Power MOSFET Drivers(抗輻射雙路同相功率MOSFET驅(qū)動器)
HS-4424RH Radiation Hardened Dual, Non-Inverting Power MOSFET Drivers(抗輻射雙路同相功率MOSFET驅(qū)動器)
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