參數(shù)資料
型號(hào): HS9-82C08RH
廠商: HARRIS SEMICONDUCTOR
元件分類: 通用總線功能
英文描述: Radiation Hardened 8-Bit Bus Transceiver
中文描述: OCTAL LINE TRANSCEIVER, CDFP20
文件頁數(shù): 4/6頁
文件大?。?/td> 44K
代理商: HS9-82C08RH
4
Specifications HS-82C08RH
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTE)
CONDITIONS
TEMPERATURE
+25
o
C
LIMITS
UNITS
MIN
MAX
In/Out Capacitance
CI/O
VDD = Open, f = 1MHz
All Measurements Referenced
to GND.
-
10
pF
TRANSMIT/RECEIVE MODE SPECIFICATIONS (AC Parameters)
Propagation Delay from Logical “1” to
High-Impedance from T/R to Port
TPHZTR
+25
o
C
-
35
ns
Propagation Delay from Logical “0” to
High-Impedance from T/R to Port
TPLZTR
+25
o
C
-
35
ns
Propagation Delay from Logical “1” to
High-Impedance from OE to Port
TPHZ
+25
o
C
-
35
ns
Propagation Delay from Logical “0” to
High-Impedance from OE to Port
TPLZ
+25
o
C
-
35
ns
NOTE:
1. The parameters listed are controlled via design or process parameters and are not directly tested. These parameters are characterized
upon initial design release and upon design changes which could affect these characteristics.
TABLE 4. POST 100K RAD ELECTRICAL PERFORMANCE CHARACTERISTICS
NOTE:
The Post Irradiation test conditions and limits are the same as those listed in Table 1 and Table 2.
TABLE 5. BURN-IN DELTA PARAMETERS (+25
o
C; In Accordance With SMD)
Switching Time Waveforms
FIGURE 1. PORT TO PORT
FIGURE 2. AC TESTING LOAD CIRCUIT
FIGURE 3. OE TO HIGH-IMPEDANCE, OE TO PORT OUTPUT
INPUT
AN OR BN
OUTPUT
BN OR AN
VDD
0V
VDD
0V
0.5VDD
tPLH
tPHL
0.5VDD
TR
TF
0.5VDD
0.5VDD
TR = TF
20ns
10% to 90%
DEVICE
UNDER
TEST
TEST POINTS
CL (NOTE)
NOTE: CL includes stray and jig capacitance.
0.5VDD
0.5VDD
0.5VDD
0.5VDD
tPHZ
tPLZ
0.1VDD
0.1VDD
VDD
0V
VOH
VOL
INPUT OE
PORT
OUTPUT
PORT
OUTPUT
TR
TF
tPZH
tPZL
0V
VDD
TR = TF
20ns
10% to 90%
Spec Number
518057
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