參數(shù)資料
型號: HSB124
廠商: Hitachi,Ltd.
英文描述: Silicon Epitaxial Planar Diode for High Speed Switching
中文描述: 硅外延平面二極管高速開關(guān)
文件頁數(shù): 2/5頁
文件大?。?/td> 23K
代理商: HSB124
HSB124S
2
Absolute Maximum Ratings (Ta = 25
°
C)
Item
Symbol
Value
Unit
Peak reverse voltage
V
RM
V
R
I
FM
I
FSM
85
V
Reverse voltage
80
V
Peak forward current
*1
300
mA
Non-Repetitive peak
forward surge current
*2
4
A
Average rectified current
I
O
Tj
*1
100
mA
Junction temperature
125
°
C
°
C
Storage temperature
Note:
1. Two device total.
Note:
2. Value at duration of 1
μ
sec, two device total.
Tstg
-55 to +125
Electrical Characteristics (Ta = 25
°
C) *
1
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Forward voltage
V
F
I
R
C
1.2
V
I
F
= 100 mA
V
R
= 80V
V
R
= 0V, f = 1 MHz
I
F
= 10 mA, V
R
= 6V, R
L
= 50
Reverse current
0.01
μ
A
Capacitance
4.0
pF
Reverse recovery
time
Note:
1. Per one device.
t
rr
100
ns
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HSB124S 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon Epitaxial Planar Diode for High Speed Switching
HSB124S(TL-E) 制造商:Renesas Electronics Corporation 功能描述:
HSB124STL-E 制造商:Renesas Electronics Corporation 功能描述:
HSB125 制造商:Thomas & Betts 功能描述:
HSB-125-0 制造商:Thomas & Betts 功能描述:Bulk