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參數(shù)資料
| 型號(hào)： | HSCH-5500 Series |
| 英文描述： | Beam Lead Schottky Diode Pairs for Mixers and Detectors(粱式引線肖特基二極管偶（用于混頻器和檢測(cè)器）) |
| 中文描述： | 梁雙鉛肖特基二極管混頻器和檢測(cè)器為（粱式引線肖特基二極管偶（用于混頻器和檢測(cè)器）） |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 73K |
| 代理商： | HSCH-5500 SERIES |
Beam Lead Schottky Diode
Pairs for Mixers and Detectors
Technical Data
Features
Monolithic Pair
Closely Matched Electrical
Parameters
Low Capacitance
0.1 pF Maximum at 0 Volts
Low Noise Figure
Typical 7.5 dB at 26 GHz
Rugged Construction
4 Grams Minimum Lead Pull
Platinum Tri-Metal System
High Temperature Stability
Polyimide Scratch Protection
Silicon Nitride Passivation
Stable, Reliable Performance
Description
These dual beam lead diodes are
constructed using a metal-
semiconductor Schottky barrier
junction. Advanced epitaxial
techniques and precise process
control insure uniformity and
repeatability of this planar
passivated microwave semicon-
ductor. A nitride passivation layer
provides immunity from
contaminants which could
otherwise lead to I
R
drift.
The Agilent beam lead process
allows for large beam anchor pads
for rugged construction (typical 6
gram pull strength) without
degrading capacitance.
HSCH-5500 Series
Outline 04B
Maximum Ratings (for Each Diode)
Pulse Power Incident at T
A
= 25
°
C ..........................................................1 W
Pulse Width = 1
μ
s, Du = 0.001
CW Power Dissipation at T
A
= 25
°
C ................................................ 150 mW
Measured in an infinite heat sink derated linearly
to zero at maximum rated temperature
T
OPR
– Operating Temperature Range ...............................-65
°
C to +175
°
C
T
STG
– Storage Temperature Range ....................................-65
°
C to +200
°
C
Minimum Lead Strength ........................................4 grams pull on any lead
Diode Mounting Temperature ................................. 350
°
C for 10 sec. max.
These diodes are ESD sensitive. Handle with care to avoid static
discharge through the diode.
250 (10.0)
200 (8.0)
60 (2.4)
40 (1.5)
120 (5.0)
90 (3.5)
190 (7.0)
160 (6.0)
540 (21.0)
480 (19.0)
220 (9.0)
180 (6.0)
220 (9.0)
180 (7.0)
DIMENSIONS IN
μ
m (1/1000 inch)
COMMON
ANODE
CATHODE
PLATINUM
METALLIZATION
GLASS
GLASS
GOLD
BEAMS
CATHODE
12 (0.5)
8 (0.3)
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|---|---|
| HSCH-9201 | GaAs Beam Lead Schottky Barrier Diodes(砷化鎵粱式引線肖特基勢(shì)壘二極管) |
| HSCH-9101 | GaAs Beam Lead Schottky Barrier Diodes(砷化鎵粱式引線肖特基勢(shì)壘二極管) |
| HSCH-9251 | GaAs Beam Lead Schottky Barrier Diodes(砷化鎵粱式引線肖特基勢(shì)壘二極管) |
| HSCH-9301 | GaAs Beam Lead Schottky Barrier Ring and Bridge Diodes(砷化鎵粱式引線肖特基勢(shì)壘環(huán)二極管和橋二極管) |
| HSCH-9351 | GaAs Beam Lead Schottky Barrier Ring and Bridge Diodes(砷化鎵粱式引線肖特基勢(shì)壘環(huán)二極管和橋二極管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HSCH-5512 | 功能描述:射頻檢測(cè)器 1-26GHz RoHS:否 制造商:Skyworks Solutions, Inc. 配置: 頻率范圍:650 MHz to 3 GHz 最大二極管電容: 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝 / 箱體:SC-88 封裝:Reel |
| HSCH5531 | 制造商:ASI 制造商全稱:ASI 功能描述:BEAM LEAD SCHOTTKY DIODE |
| HSCH-5531 | 功能描述:射頻檢測(cè)器 1-26GHz RoHS:否 制造商:Skyworks Solutions, Inc. 配置: 頻率范圍:650 MHz to 3 GHz 最大二極管電容: 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝 / 箱體:SC-88 封裝:Reel |
| HSCH-910 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:GaAs Beam Lead Schottky Barrier Diodes (48K in pdf) |
| HSCH-9101 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:GaAs Beam Lead Schottky Barrier Diodes (48K in pdf) |
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