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參數(shù)資料
| 型號： | HSCH-9251 |
| 英文描述： | GaAs Beam Lead Schottky Barrier Diodes(砷化鎵粱式引線肖特基勢壘二極管) |
| 中文描述： | 砷化鎵梁式引線肖特基二極管（砷化鎵粱式引線肖特基勢壘二極管） |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 38K |
| 代理商： | HSCH-9251 |
2
Electrical Specifications at T
A
= 25
°
C
Part Number
Parameters and Test Conditions
Junction Capacitance
V
R
= 0 V, f = 1 MHz
Junction Capacitance Difference
V
R
= 0 V, f = 1 MHz
Series Resistance
Forward Voltage
I
F
= 1 mA
Forward Voltage
I
F
= 10 mA
Forward Voltage Difference
I
F
= 1 mA and 10 mA
Reverse Breakdown Voltage
V
= V
measure I
R
≤
10
μ
A
(per junction)
HSCH-9101
Min.
Typ.
0.040
HSCH-9201
Min.
Typ.
0.040
HSCH-9251
Min.
Typ.
0.040
Symbol
C
j[1]
Units
pF
Max.
0.050
Max.
0.050
Max.
C
j[1]
pF
0.005
0.010
R
S[2]
V
F1
mV
6
6
6
700
800
700
800
700
800
V
F10
mV
800
850
800
850
800
850
V
F
mV
15
15
V
BR
V
4.5
4.5
Notes:
1. Junction capacitance is determined by measuring total device capacitance and subtracting the calculated parasitic capacitance (0.035 pF).
2. Series resistance is determined by measuring the dynamic resistance and subtracting the calculated junction resistance of 6
.
Applications
This line of Schottky diodes is
optimized for use in mixer appli-
cations at millimeter wave
frequencies. Some suggested
mixer types are single ended and
single balanced for the single and
series pair. The anti-parallel pair
is ideal for harmonic mixers.
Assembly Techniques
Maximum Ratings
Power Dissipation at T
LEAD
= 25
°
C .............................. 75 mW per junction
Measured in an infinite heat sink derated linearly
to zero at maximum rated temperature
Operating Temperature ........................................................-65
°
C to +150
°
C
Storage Temperature ............................................................-65
°
C to +150
°
C
Mounting Temperature................................................235
°
C for 10 seconds
Minimum Lead Strength .................................................................... 6 grams
Thermocompression bonding is
recommended. Welding or
conductive epoxy may also be
used. For additional information
see Application Note 979, “The
Handling and Bonding of Beam
Lead Devices Made Easy,” or
Application Note 992, “Beam Lead
Attachment Methods,” or
Application Note 993, “Beam Lead
Device Bonding to Soft
Substrates.”
GaAs diodes are ESD sensitive.
Proper precautions should be
used when handling these
devices.
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