參數(shù)資料
型號: HSDL-4420
英文描述: High-Performance IR Emitter Photodiode in Subminiature SMT Package(高性能 IR發(fā)射器光二極管(微型SMT封裝))
中文描述: 高性能紅外發(fā)射二極管的微型表面貼裝封裝(高性能紅外發(fā)射器光二極管(微型表面貼裝封裝))
文件頁數(shù): 13/19頁
文件大?。?/td> 266K
代理商: HSDL-4420
13
HSDL-54xx Absolute Maximum Ratings
Parameter
Power Dissipation
Reverse Voltage (I
R
= 100
μ
A)
Operating Temperature
Storage Temperature
Junction Temperature
Lead Solder Temperature [1.6 mm (0.063 in.) from body]
Reflow Soldering Temperatures
Convection IR
Vapor Phase
Symbol
P
DISS
V
R
T
O
T
S
T
J
Min.
Max.
150
40
85
100
110
260/5 s
Unit
mW
V
°
C
°
C
°
C
°
C
-40
-55
235/90 s
215/180 s
°
C
°
C
HSDL-54xx Electrical Characteristics at T
A
= 25
°
C
Parameter
Forward Voltage
Breakdown Voltage
Symbol
V
F
V
BR
Min.
Typ.
0.8
Max.
Unit
V
V
Condition
I
FDC
= 1 mA
I
R
= 100
μ
A,
E
e
= 0 mW/cm
2
V
R
= 5 V,
E
e
= 0 mW/cm
2
V
R
= 5 V,
E
e
= 0 mW/cm
2
V
R
= 0 V,
E
e
= 0 mW/cm
2
f = 1 MHz
E
e
= 1 mW/cm
2
λ
PK
= 875 nm
E
e
= 1 mW/cm
2
λ
PK
= 875 nm
E
e
= 1 mW/cm
2
λ
PK
= 875 nm
Ref.
40
Reverse Dark Current
I
D
1
5
nA
Fig. 12
Series Resistance
R
S
2000
Diode Capacitance
C
O
5
pF
Fig. 16
Open Circuit Voltage
V
OC
375
mV
Temperature Coefficient of V
OC
V
OC
/
T
-2.2
mV/K
Short Circuit Current
HSDL-5400
HSDL-5420
Temperature Coefficient of I
SC
I
SC
1.6
4.3
0.16
μ
A
μ
A
%/K
I
SC
/
T
E
e
= 1 mW/cm
2
λ
PK
= 875 nm
Thermal Resistance,
Junction to Pin
R
θ
jp
170
°
C/W
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