參數(shù)資料
型號: HSDL-5400
英文描述: High-Performance IR PIN Photodiode in Subminiature SMT Package(高性能 IR發(fā)射器光二極管(微型SMT封裝))
中文描述: 高性能紅外PIN光電二極管在微型表面貼裝封裝(高性能紅外發(fā)射器光二極管(微型表面貼裝封裝))
文件頁數(shù): 15/19頁
文件大小: 266K
代理商: HSDL-5400
15
R
850
950
0
800
λ
– WAVELENGTH – nm
900
0.5
1.0
1.5
T
A
= 25 °C
I
FDC
= 50 mA
I
1.0
1,000
1
VF – FORWARD VOLTAGE – V
1.5
2.0
2.5
3.0
0.5
0
10
100
TA = 25 °C
Figure 3. Forward Voltage vs Ambient
Temperature.
Figure 5. Normalized Radiant
Intensity vs. Peak Forward Current
(0 to 10 mA).
N
0
500
5.00
0
I
FPK
– PEAK FORWARD CURRENT – mA
4.00
0.50
400
PULSE WIDTHS < 100 μs
T
A
= 25°C
100
2.50
200
300
1.00
1.50
2.00
3.00
3.50
4.50
N
0.1
10
1.00
0.01
I
FPK
– FORWARD CURRENT – mA
0.10
1
T
A
= 25°C
I
F
-40
100
120
0
T
A
– AMBIENT TEMPERATURE – °C
60
-20
100
80
40
20
0
20
40
60
80
R
θ
ja
= 220 °C/W
R
θ
ja
= 270 °C/W
R
θ
ja
= 370 °C/W
I
F
0.01
10
0
t
PW
– PULSE WIDTH – ms
300
500
400
200
100
0.1
1
DUTY FACTOR
7 %
10 %
20 %
50 %
I
F
-40
100
600
0
T
A
– AMBIENT TEMPERATURE – °C
300
-20
500
400
200
100
0
20
40
60
80
PULSE WIDTHS < 100 μs
DUTY FACTOR
10 %
20 %
50 %
20 %
50 %
10 %
Figure 8. Maximum Peak Forward
Current vs. Ambient Temperature.
Derated Based on T
JMAX
= 110
°
C.
V
F
2.0
1.0
T
A
– AMBIENT TEMPERATURE – °C
-20
1.2
0
20
40
60
80
I
FDC
= 1 mA
1.8
1.6
1.4
I
FDC
= 50 mA
I
FDC
= 100 mA
Figure 1. Relative Radiant Intensity
vs. Wavelength.
Figure 2. Peak Forward Current vs.
Forward Voltage.
Figure 4. Normalized Radiant
Intensity vs. Peak Forward Current.
Figure 6. Maximum DC Forward
Current vs. Ambient Temperature.
Derated Based on T
JMAX
= 110
°
C.
Figure 7. Maximum Peak Forward
Current vs. Duty Factor.
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