參數(shù)資料
型號: HSDL-5420
英文描述: High-Performance IR PIN Photodiode in Subminiature SMT Package(高性能 IR PIN 光二極管(微型SMT封裝))
中文描述: 高性能紅外PIN光電二極管在微型表面貼裝封裝(高性能紅外密碼光二極管(微型表面貼裝封裝))
文件頁數(shù): 11/19頁
文件大?。?/td> 266K
代理商: HSDL-5420
11
HSDL-44xx Absolute Maximum Ratings
Parameter
Peak Forward Current
(
Duty Factor = 20%,
Pulse Width = 100
μ
s)
DC Forward Current
Power Dissipation
Reverse Voltage (I
R
= 100
μ
A)
Transient Forward Current
(10
μ
s Pulse)
Operating Temperature
Storage Temperature
Junction Temperature
Lead Solder Temperature
[1.6 mm (0.063 in.) from body]
Reflow Soldering Temperatures
Convection IR
Vapor Phase
Symbol
I
FPK
Min.
Max.
500
Unit
mA
Ref.
Fig. 7, 8
I
FDC
P
DISS
V
R
I
FTR
T
O
T
S
T
J
100
100
mA
mW
V
A
°
C
°
C
°
C
°
C
Fig. 6
5
1.0
85
100
110
260/5 s
[1]
-40
-55
235/90 s
215/180 s
°
C
°
C
Fig. 20
Note:
1. The transient peak current in the maximum nonrecurring peak current the device can withstand without damaging the LED die and
the wire bonds.
HSDL-44xx Electrical Characteristics at T
A
= 25
°
C
Parameter
Symbol
Forward Voltage
Min.
1.30
Typ.
1.50
2.15
-2.1
-2.1
2.8
40
20
170
Max.
1.70
Unit
V
Condition
I
FDC
= 50 mA
I
FPK
= 250 mA
I
FDC
= 50 mA
I
FDC
= 100 mA
I
FDC
= 100 mA
0 V, 1 MHz
I
R
= 100
μ
A
Ref.
Fig. 2
V
F
Forward Voltage
Temperature Coefficient
Series Resistance
Diode Capacitance
Reverse Voltage
Thermal Resistance,
Junction to Pin
V
F
/
T
mV/
°
C
Fig. 3
R
S
C
O
V
R
R
θ
jp
pF
V
°
C/W
5
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