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參數(shù)資料
| 型號： | HSK110 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon Epitaxial Planar Diode for Tuner Band Switch(用于調(diào)諧開關(guān)的平面外延PIN二極管) |
| 中文描述： | 硅外延平面二極管調(diào)諧器波段開關(guān)（用于調(diào)諧開關(guān)的平面外延的PIN二極管） |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 28K |
| 代理商： | HSK110 |
HSK110
2
Absolute Maximum Ratings (Ta = 25
°
C)
Item
Symbol
Value
Unit
Reverse voltage
V
R
I
F
Tj
35
V
Forward current
100
mA
Junction temperature
175
°
C
°
C
Storage temperature
Tstg
–65 to +175
Electrical Characteristics (Ta = 25
°
C)
Item
Reverse voltage
Symbol
V
R
V
F
I
R
C
Min
35
Typ
—
Max
—
Unit
V
Test Condition
I
R
= 1
μ
A
I
F
= 1 mA
V
R
= 25V
V
R
= 6V, f = 1 MHz
I
F
= 2 mA, f = 100 MHz
Forward voltage
0.65
—
1.05
V
Reverse current
—
—
0.1
μ
A
Capacitance
—
—
1.2
pF
Forward resistance
r
f
—
—
0.9
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PDF描述 |
|---|---|
| HSK120 | Silicon Epitaxial Planar Diode for High Speed Switching |
| HSK122 | Silicon Epitaxial Planar Diode for High Voltage Switching |
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| HSK277 | Silicon Epitaxial Planar Diode for Tuner Band Switch(用于調(diào)諧開關(guān)的平面外延PIN二極管) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HSK1118 | 制造商:HSMC 制造商全稱:HSMC 功能描述:Silicon N Channel MOS Type |
| HSK120 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon Epitaxial Planar Diode for High Speed Switching |
| HSK120(TR-S-E) | 制造商:Renesas Electronics Corporation 功能描述: |
| HSK120-E | 制造商:Renesas Electronics Corporation 功能描述:HSK120-E |
| HSK122 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Diode for High Voltage Switching |
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