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參數(shù)資料
| 型號： | HSM123 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon Epitaxial Planar Diode for High Voltage Switching(用于高電壓開關(guān)的平面外延PIN二極管) |
| 中文描述： | 硅二極管外延平面開關(guān)（用于高電壓開關(guān)的平面外延的PIN二極管高電壓） |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 23K |
| 代理商： | HSM123 |
HSM123
2
Absolute Maximum Ratings
*
2
(Ta = 25°C)
Item
Symbol
Value
Unit
Peak reverse voltage
V
RM
V
R
I
FM
I
FSM
*
I
O
Tj
85
V
Reverse voltage
80
V
Peak forward current
300
mA
Non-Repetitive peak forward surge current
1
4
A
Average forward current
100
mA
Junction temperature
125
°C
Storage temperature
Notes: 1. Within 1μs forward surge current.
2. Per one device
Tstg
–55 to +125
°C
Electrical Characteristics
*
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Forward voltage
V
F1
V
F2
V
F3
I
R
C
—
0.70
1.0
V
I
F
= 10mA
I
F
= 50mA
I
F
= 100mA
V
R
= 80V
V
R
= 0V, f = 1MHz
I
F
= 10mA, V
R
= 6V, R
L
= 50
—
0.79
1.0
—
0.85
1.2
Reverse current
—
—
0.1
μA
Capacitance
—
1.0
4.0
pF
Reverse recovery time
Note: Per one device
t
rr
—
—
3.0
ns
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HSM123-E | 制造商:Renesas Electronics Corporation 功能描述:HSM123-E |
| HSM123TL-E | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:0 |
| HSM124 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon Epitaxial Planar Diode for Switching |
| HSM124S | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon Epitaxial Planar Diode for Switching |
| HSM124S-E | 制造商:Renesas Electronics Corporation 功能描述:HSM124S-E |
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