- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370689 > HSM83 (Hitachi,Ltd.) Silicon Epitaxial Planar Diode for High Voltage Switching PDF資料下載
參數(shù)資料
| 型號(hào)： | HSM83 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon Epitaxial Planar Diode for High Voltage Switching |
| 中文描述： | 硅二極管外延平面高壓開關(guān) |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 26K |
| 代理商： | HSM83 |
HSM83
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Value
Unit
Peak reverse voltage
V
RM
V
R
I
FM
I
FSM
300
V
Reverse voltage
250
V
Peak forward current
300
mA
Non-Repetitive peak
forward surge current
*1
2
A
Average rectified current
I
O
Tj
100
mA
Junction temperature
125
°
C
°
C
Storage temperature
Note:
1. Value at duration of 10msec.
Tstg
–55 to +125
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Forward voltage
V
F
I
R1
I
R2
C
—
—
1.2
V
I
F
= 100 mA
V
R
= 250V
V
R
= 300V
V
R
= 0V, f = 1 MHz
I
F
= I
R
= 30 mA, I
rr
= 3mA, R
L
= 100
Reverse current
—
—
0.2
μ
A
—
—
100
Capacitance
—
1.5
3.0
pF
Reverse recovery
time
t
rr
—
—
100
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HSM88 | Silicon Schottky Barrier Diode for Balanced Mixer |
| HSM88WK | Silicon Schottky Barrier Diode for Balanced Mixer |
| HSM88AS | Silicon Schottky Barrier Diode for Balanced Mixer |
| HSM88ASR | Silicon Schottky Barrier Diode for Balanced Mixer |
| HSM88WA | Silicon Schottky Barrier Diode for Balanced Mixer |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HSM830 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:8 Amp Schottky Rectifier |
| HSM830G | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Schottky Rectifier |
| HSM830G/TR13 | 制造商:Microsemi Corporation 功能描述:8.0A, 30V, VF=0.62V - Tape and Reel 制造商:Microsemi Corporation 功能描述:DIODE SCHOTTKY 8A 30V SMCG |
| HSM830GE3/TR13 | 制造商:Microsemi Corporation 功能描述:8.0A, 30V, VF=0.62V - Tape and Reel 制造商:Microsemi Corporation 功能描述:DIODE SCHOTTKY 8A 30V SMCG |
| HSM830J | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Schottky Rectifier |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。