參數(shù)資料
型號: HSMF-C167
英文描述: Miniature Bi-Color Surface Mount chipLED
中文描述: 小型雙色表面貼裝chipLED環(huán)保
文件頁數(shù): 5/16頁
文件大?。?/td> 240K
代理商: HSMF-C167
5
Optical Characteristics (T
A
= 25
°
C)
Peak
Wavelength
λ
PEAK
(nm)
Typ.
635
645
635
621
600
592
583
592
565
558
523
468
428
575
Dominant
Wavelength
D
(nm)
[1]
Typ.
626
637
626
615
602
590
585
590
569
560
525
470
462
571
Luminous
Efficacy
η
v
(lm/W)
[3]
Typ.
120
63
150
240
380
480
580
480
590
650
500
75
65
620
Luminous Intensity/
Total Flux
I
v
(mcd) /
Φ
v
(mlm)
Typ.
0.45
0.45
0.45
0.45
0.45
0.45
0.45
0.45
0.45
0.45
0.45
0.45
0.45
0.45
Viewing Angle
2
θ
1/2
(Degrees)
[2]
Typ.
120
120
120
120
120
120
120
120
120
120
120
120
120
120
Color
GaP Red
AlGaAs Red
AS AlInGaP Red
AS AlInGaP Red Orange
GaP Orange
AS AlInGaP Amber
GaP Yellow
AS AlInGaP Amber
GaP Yellow Green
GaP Emerald Green
InGaN Green
InGaN Blue
GaN Blue
AlInGaP Yellow Green
Notes:
1. The dominant wavelength,
λ
D
, is derived from the CIE Chromaticity Diagram and represents the color of the device.
2.
θ
1/2
is the off-axis angle where the luminous intensity is 1/2 the peak intensity.
3. Radiant intensity, I
e
in watts/steradian, may be calculated from the equation I
e
= I
v
/
η
v
, where I
v
is the luminous intensity in candelas and
η
v
is
the luminous efficacy in lumens/watt.
Electrical Characteristics (T
A
= 25
°
C)
Forward Voltage
V
F
(Volts) @ I
F
= 20mA
Typ.
2.2
1.9
1.9
3.9
3.4
Reverse Voltage
V
R
@ 100
μ
A
Min.
5
5
5
-
-
Reverse Voltage
V
R
@ 10
μ
A
Min.
-
-
-
5
5
Dice Technology
GaP
AS AlGaAs
AS AlInGaP
GaN Blue
InGaN
Max.
2.6
2.6
2.4
4.3
4.05
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