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參數(shù)資料
| 型號： | HSMS-280L |
| 英文描述： | Surface Mount RF Schottky Barrier Diodes(表貼型射頻肖特基勢壘二極管) |
| 中文描述： | 表面貼裝射頻肖特基二極管（表貼型射頻肖特基勢壘二極管） |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 74K |
| 代理商： | HSMS-280L |
3
Quad Capacitance
Capacitance of Schottky diode
quads is measured using an
HP4271 LCR meter. This
instrument effectively isolates
individual diode branches from
the others, allowing accurate
capacitance measurement of each
branch or each diode. The
conditions are: 20 mV R.M.S.
voltage at 1 MHz. Agilent defines
this measurement as “CM”, and it
is equivalent to the capacitance of
the diode by itself. The equivalent
diagonal and adjacent
capacitances can then be
calculated by the formulas given
below.
In a quad, the diagonal capaci-
tance is the capacitance between
points A and B as shown in the
figure below. The diagonal
capacitance is calculated using
the following formula
C
x C
C
DIAGONAL
= _______ + _______
C
1
+ C
2
C
x C
4
C
3
+ C
4
C
1
C
2
C
4
C
3
A
B
C
The equivalent adjacent
capacitance is the capacitance
between points A and C in the
figure below. This capacitance is
calculated using the following
formula
1
C
ADJACENT
= C
1
+ ____________
1
–– + 1
C
2
C
3
1
C
4
This information does not apply
to cross-over quad diodes.
SPICE Parameters
Parameter
Units
HSMS-280x
B
V
C
J0
E
G
I
BV
I
S
N
R
S
P
B
P
T
M
V
pF
eV
A
A
75
1.6
0.69
E -5
3E -8
1.08
30
0.65
2
0.5
V
C
j
R
j
R
S
R
= 8.33 X 10
-5
nT
I
b
+ I
s
where
I
b
= externally applied bias current in amps
I
s
= saturation current (see table of SPICE parameters)
T
= temperature,
°
K
n = ideality factor (see table of SPICE parameters)
Note:
To effectively model the packaged HSMS-280x product,
please refer to Application Note AN1124.
R
S
= series resistance (see Table of SPICE parameters)
C
j
= junction capacitance (see Table of SPICE parameters)
Linear Equivalent Circuit, Diode Chip
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HSMS-280M | Surface Mount RF Schottky Barrier Diodes(表貼型射頻肖特基勢壘二極管) |
| HSMS-280N | Surface Mount RF Schottky Barrier Diodes(表貼型射頻肖特基勢壘二極管) |
| HSMS-280P | Surface Mount RF Schottky Barrier Diodes(表貼型射頻肖特基勢壘二極管) |
| HSMS-281E-TR1 | Surface Mount RF Schottky Barrier Diodes |
| HSMS-2810-BLK | Surface Mount RF Schottky Barrier Diodes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HSMS-280L/M/N/P/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Surface Mount RF Schottky Diodes in SOT-363 (SC-70. 6 Lead) (128K in pdf) |
| HSMS280L-BLK | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:ARRAY OF INDEPENDENT DIODES|TSOP |
| HSMS-280L-BLKG | 功能描述:肖特基二極管與整流器 70 VBR 2 pF RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| HSMS280L-TR1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:ARRAY OF INDEPENDENT DIODES|TSOP |
| HSMS-280L-TR1G | 功能描述:肖特基二極管與整流器 70 VBR 2 pF RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
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