- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370699 > HSMS-2825 Surface Mount RF Schottky Barrier Diodes(表貼型射頻肖特基勢壘二極管) PDF資料下載
參數(shù)資料
| 型號： | HSMS-2825 |
| 英文描述： | Surface Mount RF Schottky Barrier Diodes(表貼型射頻肖特基勢壘二極管) |
| 中文描述： | 表面貼裝射頻肖特基二極管（表貼型射頻肖特基勢壘二極管） |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 66K |
| 代理商： | HSMS-2825 |
3
Absolute Maximum Ratings
[1]
T
A
= 25
°
C
Symbol
Parameter
I
f
Forward Current (1 ms Pulse)
P
t
Total Device Dissipation
P
IV
Peak Inverse Voltage
T
j
Junction Temperature
T
stg
Storage Temperature
Value
1 Amp
250 mW
[2]
Same as V
BR
150
°
C
-65 to 150
°
C
Notes:
1. Operation in excess of any one of these conditions may result in permanent
damage to this device.
2. CW Power Dissipation at T
LEAD
= 25
°
C. Derate to zero at maximum rated
temperature.
Quad Capacitance
Capacitance of Schottky diode
quads is measured using an
HP4271 LCR meter. This
instrument effectively isolates
individual diode branches from
the others, allowing accurate
capacitance measurement of each
branch or each diode. The
conditions are: 20 mV R.M.S.
voltage at 1 MHz. HP defines this
measurement as “CM”, and it is
equivalent to the capacitance of
the diode by itself. The equivalent
diagonal and adjacent
capacitances can then be
calculated by the formulas given
below.
In a quad, the diagonal capaci-
tance is the capacitance between
points A and B as shown in the
figure below. The diagonal
capacitance is calculated using
the following formula
C
x C
C
DIAGONAL
= _______ + _______
C
1
+ C
2
C
x C
4
C
3
+ C
4
C
1
C
2
C
4
C
3
A
B
C
The equivalent adjacent
capacitance is the capacitance
between points A and C in the
figure below. This capacitance is
calculated using the following
formula
1
C
ADJACENT
= C
1
+ ____________
1
–– + 1
C
2
C
3
1
C
4
This information does not apply
to cross-over quad diodes.
SPICE Parameters
Parameter
Units
HSMS-280X
HSMS-281X
HSMS-282X
HSMS-286X
B
V
C
J0
E
G
I
BV
I
S
N
R
S
P
B
P
T
M
V
75
1.6
0.69
10E -5
3 x 10E -8
1.08
30
0.65
2
0.5
25
1.1
0.69
10E -5
4.8 x 10E -9
1.08
10
0.65
2
0.5
15
0.7
0.69
10E -4
2.2 x 10E -8
1.08
6.0
0.65
2
0.5
7.0
0.18
0.69
10E -5
5.0 x 10E -8
1.08
5.0
0.65
2
0.5
pF
eV
A
A
V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HSMS-2828 | Surface Mount RF Schottky Barrier Diodes(表貼型射頻肖特基勢壘二極管) |
| HSMS-2805 | Surface Mount RF Schottky Barrier Diodes(表貼型射頻肖特基勢壘二極管) |
| HSMS-2807 | Surface Mount RF Schottky Barrier Diodes(表貼型射頻肖特基勢壘二極管) |
| HSMS-2808 | Surface Mount RF Schottky Barrier Diodes(表貼型射頻肖特基勢壘二極管) |
| HSMS-2860 | Surface Mount RF Schottky Barrier Diodes(表貼型射頻肖特基勢壘二極管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HSMS-2825#L31 | 制造商:Hewlett Packard Co 功能描述:SILICON, MIXER DIODE |
| HSMS-2825-BLK | 制造商:Agilent Technologies 功能描述:SILICON, C BAND, MIXER DIODE |
| HSMS-2825-BLKG | 功能描述:肖特基二極管與整流器 15 VBR 1 pF RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| HSMS-2825-BLKG | 制造商:Avago Technologies 功能描述:Schottky Rectifier |
| HSMS2825L31 | 制造商:HP 功能描述:* |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。