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參數(shù)資料
| 型號(hào)： | HSMS-282A |
| 英文描述： | Surface Mount RF Schottky Diodes in SOT-323(表貼型射頻肖特基二極管（SOT-323封裝）) |
| 中文描述： | 表面貼裝射頻肖特基二極管的SOT - 323（表貼型射頻肖特基二極管（采用SOT - 323封裝）） |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 58K |
| 代理商： | HSMS-282A |
2
Electrical Specifications, T
C
= +25
°
C, Single Diode
[1]
Minimum Maximum Maximum Maximum
Breakdown Forward
Voltage
Voltage
V
BR
(V)
V
F
(mV)
Typical
Dynamic
Part
Number Marking Lead
HSMS-
Code
[2]
Code Configuration
Package
Forward
Voltage
V
F
(V) @ I
R
( nA) @
I
F
(mA)
Reverse
Leakage Capacitance Resistance
C
T
(pF)
V
R
(V)
Maximum
R
D
(
)
280B
280C
280E
280F
281B
281C
281E
281F
282B
282C
282E
282F
Test Conditions
A0
A2
A3
A4
B0
B2
B3
B4
C0
C2
C3
C4
B
C
E
F
B
C
E
F
B
C
E
F
Single
Series
Common Anode
Common Cathode
Single
Series
Common Anode
Common Cathode
Single
Series
Common Anode
Common Cathode
70
400
1.0
15
200
50
2.0
35
20
400
1.0
35
200
15
1.2
15
15
340
0.7
30
100
1
1.0
12
I
R
= 10
μ
A I
F
= 1 mA
[3]
V
= 0 V
f = 1 MHz
[4]
I
F
= 5 mA
Notes:
1. Effective Carrier Lifetime (
τ
) for all these diodes is 100 ps maximum measured with Krakauer method at
5mA, except HSMS-282X which is measured at 20 mA.
2. Package marking code is laser marked.
3.
V
F
for diodes in pairs is 15.0 mV maximum at 1.0 mA.
4.
C
TO
for diodes in pairs is 0.2 pF maximum.
Typical Performance, T
C
= 25
°
C (unless otherwise noted), Single Diode
Figure 2. Forward Current vs.
Forward Voltage at Temperatures—
HSMS-281A Series.
0
0.1
0.3
0.2
0.5 0.6
0.4
0.8
0.7
0.9
I
F
V
F
– FORWARD VOLTAGE (V)
Figure 1. Forward Current vs.
Forward Voltage at Temperatures—
HSMS-280A Series.
0.01
10
1
0.1
100
T
A
= +125
°
C
T
A
= +75
°
C
T
A
= +25
°
C
T
A
= –25
°
C
0
0.1
0.3
0.2
0.5 0.6
0.4
0.8
0.7
I
F
V
F
– FORWARD VOLTAGE (V)
0.01
10
1
0.1
100
T
A
= +125
°
C
T
A
= +75
°
C
T
A
= +25
°
C
T
A
= –25
°
C
Figure 3. Forward Current vs.
Forward Voltage at Temperatures—
HSMS-282A Series.
0
0.10
0.20
0.30
0.50
0.40
I
F
V
F
– FORWARD VOLTAGE (V)
0.01
10
1
0.1
100
T
A
= +125
°
C
T
A
= +75
°
C
T
A
= +25
°
C
T
A
= –25
°
C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HSMS-281A | Surface Mount RF Schottky Diodes in SOT-323(表貼型射頻肖特基二極管（SOT-323封裝）) |
| HSMS-280A | Surface Mount RF Schottky Diodes in SOT-323(表貼型射頻肖特基二極管（SOT-323封裝）) |
| HSMS-282B | Surface Mount RF Schottky Barrier Diodes(表貼型射頻肖特基勢壘二極管) |
| HSMS-282C | Surface Mount RF Schottky Barrier Diodes(表貼型射頻肖特基勢壘二極管) |
| HSMS-282E | Surface Mount RF Schottky Barrier Diodes(表貼型射頻肖特基勢壘二極管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HSMS-282ASERIES | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Surface Mount RF Schottky Diodes in SOT-323 (SC-70) (87K in pdf) |
| HSMS282B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Surface Mount Zero Bias Schottky |
| HSMS-282B | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Surface Mount RF Schottky Barrier Diodes |
| HSMS-282B-BLK | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Surface Mount RF Schottky Barrier Diodes |
| HSMS-282B-BLKG | 功能描述:肖特基二極管與整流器 15 VBR 1 pF RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
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