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參數(shù)資料
| 型號： | HSMS-2865 |
| 英文描述： | Surface Mount RF Schottky Barrier Diodes(表貼型射頻肖特基勢壘二極管) |
| 中文描述： | 表面貼裝射頻肖特基二極管（表貼型射頻肖特基勢壘二極管） |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 66K |
| 代理商： | HSMS-2865 |
3
Absolute Maximum Ratings
[1]
T
A
= 25
°
C
Symbol
Parameter
I
f
Forward Current (1 ms Pulse)
P
t
Total Device Dissipation
P
IV
Peak Inverse Voltage
T
j
Junction Temperature
T
stg
Storage Temperature
Value
1 Amp
250 mW
[2]
Same as V
BR
150
°
C
-65 to 150
°
C
Notes:
1. Operation in excess of any one of these conditions may result in permanent
damage to this device.
2. CW Power Dissipation at T
LEAD
= 25
°
C. Derate to zero at maximum rated
temperature.
Quad Capacitance
Capacitance of Schottky diode
quads is measured using an
HP4271 LCR meter. This
instrument effectively isolates
individual diode branches from
the others, allowing accurate
capacitance measurement of each
branch or each diode. The
conditions are: 20 mV R.M.S.
voltage at 1 MHz. HP defines this
measurement as “CM”, and it is
equivalent to the capacitance of
the diode by itself. The equivalent
diagonal and adjacent
capacitances can then be
calculated by the formulas given
below.
In a quad, the diagonal capaci-
tance is the capacitance between
points A and B as shown in the
figure below. The diagonal
capacitance is calculated using
the following formula
C
x C
C
DIAGONAL
= _______ + _______
C
1
+ C
2
C
x C
4
C
3
+ C
4
C
1
C
2
C
4
C
3
A
B
C
The equivalent adjacent
capacitance is the capacitance
between points A and C in the
figure below. This capacitance is
calculated using the following
formula
1
C
ADJACENT
= C
1
+ ____________
1
–– + 1
C
2
C
3
1
C
4
This information does not apply
to cross-over quad diodes.
SPICE Parameters
Parameter
Units
HSMS-280X
HSMS-281X
HSMS-282X
HSMS-286X
B
V
C
J0
E
G
I
BV
I
S
N
R
S
P
B
P
T
M
V
75
1.6
0.69
10E -5
3 x 10E -8
1.08
30
0.65
2
0.5
25
1.1
0.69
10E -5
4.8 x 10E -9
1.08
10
0.65
2
0.5
15
0.7
0.69
10E -4
2.2 x 10E -8
1.08
6.0
0.65
2
0.5
7.0
0.18
0.69
10E -5
5.0 x 10E -8
1.08
5.0
0.65
2
0.5
pF
eV
A
A
V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HSMS-282A | Surface Mount RF Schottky Diodes in SOT-323(表貼型射頻肖特基二極管（SOT-323封裝）) |
| HSMS-281A | Surface Mount RF Schottky Diodes in SOT-323(表貼型射頻肖特基二極管（SOT-323封裝）) |
| HSMS-280A | Surface Mount RF Schottky Diodes in SOT-323(表貼型射頻肖特基二極管（SOT-323封裝）) |
| HSMS-282B | Surface Mount RF Schottky Barrier Diodes(表貼型射頻肖特基勢壘二極管) |
| HSMS-282C | Surface Mount RF Schottky Barrier Diodes(表貼型射頻肖特基勢壘二極管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HSMS-2865-BLKG | 功能描述:射頻檢測器 4 VBR 0.3 pF RoHS:否 制造商:Skyworks Solutions, Inc. 配置: 頻率范圍:650 MHz to 3 GHz 最大二極管電容: 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝 / 箱體:SC-88 封裝:Reel |
| HSMS-2865-BLKG | 制造商:Avago Technologies 功能描述:Schottky Rectifier |
| HSMS2865TR1 | 制造商:Avago Technologies 功能描述: |
| HSMS-2865-TR1 | 功能描述:DIODE SCHOTTKY DETECT 4V SOT-23 RoHS:否 類別:分離式半導體產(chǎn)品 >> RF 二極管 系列:- 標準包裝:3,000 系列:- 二極管類型:PIN - 單 電壓 - 峰值反向(最大):50V 電流 - 最大:50mA 電容@ Vr, F:0.4pF @ 50V，1MHz 電阻@ Vr, F:4.5 歐姆 @ 10mA，100MHz 功率耗散（最大）:100mW 封裝/外殼:SC-70，SOT-323 供應(yīng)商設(shè)備封裝:3-MCP 包裝:帶卷 (TR) |
| HSMS-2865-TR1G | 功能描述:射頻檢測器 4 VBR 0.3 pF RoHS:否 制造商:Skyworks Solutions, Inc. 配置: 頻率范圍:650 MHz to 3 GHz 最大二極管電容: 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝 / 箱體:SC-88 封裝:Reel |
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