參數(shù)資料
型號(hào)： HSMS-286P
英文描述： Surface Mount RF Schottky Detector Diodes in SOT-363(表貼型射頻肖特基檢測(cè)二極管（SOT-363封裝）)
中文描述： 表面貼裝RF肖特基二極管檢測(cè)器采用SOT - 363（表貼型射頻肖特基檢測(cè)二極管（采用SOT - 363封裝））
文件頁(yè)數(shù)： 5/12頁(yè)
文件大小： 96K
代理商： HSMS-286P
5
Applications Information
Introduction
Hewlett-Packard’s HSMS-285L and
HSMS-285P zero bias Schottky
diodes have been developed
specifically for low cost, high
volume detector applications
where bias current is not available.
The HSMS-286L, HSMS-286P and
HSMS-286R DC biased Schottky
diodes have been developed for
low cost, high volume detector
applications where stability over
temperature is an important
design consideration.
Schottky Barrier Diode
Characteristics
Stripped of its package, a Schottky
barrier diode chip consists of a
metal-semiconductor barrier
formed by deposition of a metal
layer on a semiconductor. The
most common of several different
types, the passivated diode, is
shown in Figure 9, along with its
equivalent circuit.
Figure 9. Schottky Diode Chip.
R
S
is the parasitic series resistance
of the diode, the sum of the
bondwire and leadframe
resistance, the resistance of the
bulk layer of silicon, etc. RF
energy coupled into R
S
is lost as
heat—it does not contribute to
the rectified output of the diode.
C
J
is parasitic junction capacitance
of the diode, controlled by the
thickness of the epitaxial layer and
the diameter of the Schottky
contact. R
j
is the junction
resistance of the diode, a function
of the total current flowing
through it.
8.33 x 10
-5
nT
R
= = R
V
– R
s
I
S
+ I
b
0.026
= at 25
°
C
I
S
+ I
b
where
n = ideality factor (see table of
SPICE parameters)
T = temperature in
°
K
I
S
= saturation current (see
table of SPICE parameters)
I
b
= externally applied bias
current in amps
I
S
is a function of diode barrier
height, and can range from
picoamps for high barrier diodes
to as much as 5
μ
A for very low
barrier diodes.
The Height of the Schottky
Barrier
The current-voltage characteristic
of a Schottky barrier diode at
room temperature is described by
the following equation:
V – IR
S
0.026
I = I
S
(e
(
)
– 1)
On a semi-log plot (as shown in
the HP catalog) the current graph
will be a straight line with inverse
slope 2.3 x 0.026 = 0.060 volts per
cycle (until the effect of R
S
is seen
in a curve that droops at high
current). All Schottky diode curves
have the same slope, but not
necessarily the same value of
current for a given voltage. This is
determined by the saturation
current, I
S
, and is related to the
barrier height of the diode.
Through the choice of p-type or
n-type silicon, and the selection of
metal, one can tailor the
characteristics of a Schottky
diode. Barrier height will be
altered, and at the same time C
J
and R
S
will be changed. In general,
very low barrier height diodes
(with high values of I
S
, suitable for
zero bias applications) are realized
on p-type silicon. Such diodes
suffer from higher values of R
S
than do the n-type. Thus, p-type
diodes are generally reserved for
detector applications (where very
high values of R
V
swamp out high
R
S
) and n-type diodes are used for
mixer applications (where high
L.O. drive levels keep R
V
low).
Measuring Diode Linear
Parameters
The measurement of the five
elements which make up the
equivalent circuit for a packaged
Schottky diode (see Figure 10) is a
complex task. Various techniques
are used for each element. The
task begins with the elements of
the diode chip itself.
L
P
R
S
R
V
C
J
C
P
FOR THE HSMS-285A or HSMS-286A SERIES
C
P
= 0.08 pF
L
P
= 2 nH
Figure 10. E quivalent Circuit of a
Schottky Diode.
R
S
is perhaps the easiest to
measure accurately. The V-I curve
is measured for the diode under
forward bias, and the slope of the
curve is taken at some relatively
high value of current (such as
5mA). This slope is converted into
a resistance R
d
.
= R
I
f
R
S
–
R
S
R
j
C
j
METAL
SCHOTTKY JUNCTION
PASSIVATION
N-TYPE OR P-TYPE EPI LAYER
PASSIVATION
N-TYPE OR P-TYPE SILICON SUBSTRATE
CROSS-SECTION OF SCHOTTKY
BARRIER DIODE CHIP
EQUIVALENT
CIRCUIT
相關(guān)PDF資料
PDF描述
HSMS-286R Surface Mount RF Schottky Detector Diodes in SOT-363(表貼型射頻肖特基檢測(cè)二極管（SOT-363封裝）)
HSMS-8205 Surface Mount Microwave Schottky Mixer Diodes(表貼型微波肖特基混頻二極管（成對(duì)分離）)
HSMS-8207 Surface Mount Microwave Schottky Mixer Diodes(表貼型微波肖特基混頻二極管（四路振鈴）)
HSMS-8101 Surface Mount Microwave Schottky Mixer Diodes(表貼型微波肖特基混頻二極管（單路）)
HSMS-8202 Surface Mount Microwave Schottky Mixer Diodes(表貼型微波肖特基混頻二極管（系列成對(duì)）)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HSMS286P-BLK 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:BRIDGE/RING DIODE ARRAY|TSOP
HSMS-286P-BLKG 功能描述:射頻檢測(cè)器 4 VBR 0.3 pF RoHS:否 制造商:Skyworks Solutions, Inc. 配置: 頻率范圍:650 MHz to 3 GHz 最大二極管電容: 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝 / 箱體:SC-88 封裝:Reel
HSMS-286P-BLKG 制造商:Avago Technologies 功能描述:SCHOTTKY DIODE
HSMS286P-TR1 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:BRIDGE/RING DIODE ARRAY|TSOP
HSMS-286P-TR1G 功能描述:射頻檢測(cè)器 4 VBR 0.3 pF RoHS:否 制造商:Skyworks Solutions, Inc. 配置: 頻率范圍:650 MHz to 3 GHz 最大二極管電容: 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝 / 箱體:SC-88 封裝:Reel
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