- 您現在的位置：買賣IC網 > PDF目錄370699 > HSMS-286R Surface Mount RF Schottky Detector Diodes in SOT-363(表貼型射頻肖特基檢測二極管（SOT-363封裝）) PDF資料下載
參數資料
| 型號： | HSMS-286R |
| 英文描述： | Surface Mount RF Schottky Detector Diodes in SOT-363(表貼型射頻肖特基檢測二極管（SOT-363封裝）) |
| 中文描述： | 表面貼裝RF肖特基二極管檢測器采用SOT - 363（表貼型射頻肖特基檢測二極管（采用SOT - 363封裝）） |
| 文件頁數： | 9/12頁 |
| 文件大?。?/td> | 96K |
| 代理商： | HSMS-286R |
9
Equation (1) would be straightfor-
ward to solve but for the fact that
diode forward voltage is a func-
tion of temperature as well as
forward current. The equation,
equation 3, for V
f
is:
11600 (V
f
– I
f
R
s
)
= I
I
S
e – 1
E quation ( 3) .
where
n = ideality factor
T = temperature in
°
K
R
s
= diode series resistance
and I
S
(diode saturation current)
is given by
2 1 1
n – 4060
T – 298
)
I
= I
T
)
e
298
E quation ( 4) .
Equations (1) and (3) are solved
simultaneously to obtain the value
of junction temperature for given
values of diode case temperature,
DC power dissipation and RF
power dissipation.
Temperature Compensation
The compression of the detector’s
transfer curve is beyond the scope
of this data sheet, but some
general comments can be made.
As was given earlier, the diode’s
video resistance is given by
8.33 x 10
-5
nT
R
=
I
S
+ I
b
where T is the diode’s tempera-
ture in
°
K.
As can be seen, temperature has a
strong effect upon R
V
, and this
will in turn affect video bandwidth
and input RF impedance. A glance
at Figure 7 suggests that the
proper choice of bias current in
the HSMS-286
a
series can mini-
mize variation over temperature.
The detector circuits described
earlier were tested over tempera-
ture. The 915 MHz voltage doubler
using the HSMS-286
a
series
produced the output voltages as
shown in Figure 20. The use of
3
μ
A of bias resulted in the highest
voltage sensitivity, but at the cost
of a wide variation over tempera-
ture. Dropping the bias to 1
μ
A
produced a detector with much
less temperature variation.
A similar experiment was con-
ducted with the HSMS-286
a
series
in the 5.8 GHz detector. Once
again, reducing the bias to some
level under 3
μ
A stabilized the
output of the detector over a wide
temperature range.
It should be noted that curves
such as those given in Figures 20
and 21 are highly dependent upon
the exact design of the input
impedance matching network.
The designer will have to experi-
ment with bias current using his
specific design.
Figure 20. Output Voltage vs.
Temperature and Bias Current in the
915 MHz Voltage Doubler using the
HSMS-286
a
Series.
-55
-35
-15
5
85
45
65
O
TEMPERATURE (
°
C)
25
40
80
60
120
100
INPUT POWER = –30 dBm
3.0
μ
A
1.0
μ
A
10
μ
A
0.5
μ
A
Figure 21. Output Voltage vs.
Temperature and Bias Current in the
5.80 GHz Voltage Detector using the
HSMS-286
a
Series.
O
TEMPERATURE (
°
C)
5
-55
15
35
25
INPUT POWER = –30 dBm
3.0
μ
A
10
μ
A
1.0
μ
A
0.5
μ
A
-35
-15
5
85
45
65
25
相關PDF資料 |
PDF描述 |
|---|---|
| HSMS-8205 | Surface Mount Microwave Schottky Mixer Diodes(表貼型微波肖特基混頻二極管（成對分離）) |
| HSMS-8207 | Surface Mount Microwave Schottky Mixer Diodes(表貼型微波肖特基混頻二極管（四路振鈴）) |
| HSMS-8101 | Surface Mount Microwave Schottky Mixer Diodes(表貼型微波肖特基混頻二極管（單路）) |
| HSMS-8202 | Surface Mount Microwave Schottky Mixer Diodes(表貼型微波肖特基混頻二極管（系列成對）) |
| HSMS-8209 | Surface Mount Microwave Schottky Mixer Diodes(表貼型微波肖特基混頻二極管（四路正交）) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HSMS286R-BLK | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BRIDGE/RING DIODE ARRAY|TSOP |
| HSMS-286R-BLKG | 功能描述:射頻檢測器 4 VBR 0.3 pF RoHS:否 制造商:Skyworks Solutions, Inc. 配置: 頻率范圍:650 MHz to 3 GHz 最大二極管電容: 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝 / 箱體:SC-88 封裝:Reel |
| HSMS286R-TR1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BRIDGE/RING DIODE ARRAY|TSOP |
| HSMS-286R-TR1G | 功能描述:射頻檢測器 4 VBR 0.3 pF RoHS:否 制造商:Skyworks Solutions, Inc. 配置: 頻率范圍:650 MHz to 3 GHz 最大二極管電容: 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝 / 箱體:SC-88 封裝:Reel |
| HSMS-286R-TR2G | 功能描述:肖特基二極管與整流器 4 VBR 0.3 pF RoHS:否 制造商:Skyworks Solutions, Inc. 產品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復。