參數(shù)資料
型號: HSMS-286x
英文描述: Surface Mount Microwave Schottky Detector Diodes
中文描述: 表面安裝微波肖特基二極管探測器
文件頁數(shù): 4/6頁
文件大?。?/td> 153K
代理商: HSMS-286X
4
Typical Parameters, Single Diode
1
10
100
1
10
F
(
μ
A
F
(
V
POWER IN (dBm)
0.05
0.15
0.20
0.10
0.25
FORWARD VOLTAGE (V)
Figure 3. Typical Forward Voltage
Match, HSMS-2860 Pairs.
.01
.1
1
10
100
0.1 0.2 0.3 0.4
0.7
0.6
0.8 0.9
0.5
1.0
F
FORWARD VOLTAGE (V)
Figure 2. Typical Forward Current vs.
Forward Voltage at Temperature,
HSMS-2860 Series.
Figure 1. Typical Forward Current vs.
Forward Voltage, HSMS-2850 Series.
1
–40
10
100
1000
10,000
–30
–10
0
–20
10
Figure 6. Dynamic Transfer
Characteristic as a Function of DC Bias,
HSMS-2860.
Figure 4. +25
°
C Output Voltage vs.
Input Power, HSMS-2850 at Zero Bias,
HSMS-2860 at 3
μ
A Bias.
Figure 5. +25
°
C Expanded Output
Voltage vs. Input Power. See Figure 4.
5
35
30
40
10
15
20
25
.1
1
10
100
O
BIAS CURRENT (
μ
A)
Figure 7. Voltage Sensitivity as a
Function of DC Bias Current,
HSMS-2860.
Figure 8. Output Voltage vs.
Temperature, HSMS-2850 Series.
T
A
= +85
°
C
T
A
= +25
°
C
T
A
= –55
°
C
I
F
(left scale)
V
F
(right scale)
Frequency = 2.45 GHz
Fixed-tuned FR4 circuit
R
L
= 100 K
20
μ
A
5
μ
A
10
μ
A
Input Power =
–30 dBm @ 2.45 GHz
Data taken in fixed-tuned
FR4 circuit
R
L
= 100 K
I
F
0
0.01
V
F
– FORWARD VOLTAGE (V)
0.8 1.0
100
1
0.1
0.2
1.8
10
1.4
0.4 0.6
1.2
1.6
V
-50
0.1
POWER IN (dBm)
-30
-20
10000
10
1
-40
0
100
-10
1000
R
L
= 100 K
5.8 GHz
DIODES TESTED IN FIXED-TUNED
FR4 MICROSTRIP CIRCUITS.
915 MHz
2.45 GHz
V
-50
0.3
POWER IN (dBm)
-30
10
1
-40
30
R
L
= 100 K
2.45 GHz
915 MHz
5.8 GHz
DIODES TESTED IN FIXED-TUNED
FR4 MICROSTRIP CIRCUITS.
O
0
0.9
TEMPERATURE (
°
C)
40 50
3.1
2.1
1.9
1.5
1.3
10
100
2.5
2.3
80
20 30
70
90
60
1.1
1.7
2.7
2.9
MEASUREMENTS MADE USING A
FR4 MICROSTRIP CIRCUIT.
FREQUENCY = 2.45 GHz
P
IN
= -40 dBm
R
L
= 100 K
Applications Information
See the HSMS-285A data sheet.
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