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參數(shù)資料
| 型號(hào)： | HSR101 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon Schottky Barrier Diode for Various detector, High speed switching(用于多種檢波和高速開(kāi)關(guān)的肖特基勢(shì)壘二極管) |
| 中文描述： | 硅肖特基二極管各種探測(cè)器，高速開(kāi)關(guān)（用于多種檢波和高速開(kāi)關(guān)的肖特基勢(shì)壘二極管） |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大小： | 27K |
| 代理商： | HSR101 |
HSR101
2
Absolute Maximum Ratings (Ta = 25
°
C)
Item
Symbol
Value
Unit
Reverse voltage
V
R
I
F
Tj
30
V
Forward current
35
mA
Junction temperature
125
°
C
°
C
Storage temperature
Tstg
–55 to +125
Electrical Characteristics (Ta = 25
°
C)
Item
Reverse voltage
Symbol
V
R
I
R
V
F
C
Min
30
Typ
—
Max
—
Unit
V
Test Condition
I
R
= 10
μ
A
V
R
= 10 V
I
F
= 10mA
V
R
= 0 V, f = 1 MHz
V
R
= 0 V, f = 1 MHz
I
F
= 10mA
C=200pF , Both forward and reverse
direction 1 pulse.
Reverse current
—
—
10
nA
Forward voltage
—
—
0.70
V
Capacitance
—
—
1.50
pF
Capacitance deviation
C
V
F
—
—
—
0.10
pF
Forward voltage deviation
—
—
10
mV
ESD-Capability
*1
—
—
—
V
Notes
Notes
1. Failure criterion ; I
R
≥
20nA at V
R
=10V
2. Each group shall uniform a multiple of 4 diodes.
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