參數(shù)資料
型號(hào)： HUF75307P3
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs
中文描述： 15 A, 55 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù)： 1/18頁
文件大?。?/td> 204K
代理商： HUF75307P3
4-40
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
UltraFET is a trademark of Intersil Corporation. PSPICE is a trademark of MicroSim Corporation.
SABER
is a Copyright of Analogy, Inc. http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
HUF75307P3, HUF75307D3, HUF75307D3S
15A, 55V 0.090 Ohm, N-Channel UltraFET
Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET process.
This advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75307.
Features
15A, 55V
Simulation Models
- Temperature Compensated PSPICE
and SABER
Models
- SPICE and SABER Thermal Impedance Models
Available on the WEB at:
www.semi.Intersil .com/families/models.htm
Peak Current vs Pulse Width Curve
UIS Rating Curve
Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF75307P3
TO-220AB
75307P
HUF75307D3
TO-251AA
75307D
HUF75307D3S
TO-252AA
75307D
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-252AA variant in tape and reel, e.g., HUF75307D3ST.
D
G
S
JEDEC TO-220AB
JEDEC TO-251AA
JEDEC TO-252AA
GATE
SDRAIN
DRAIN
(FLANGE)
SOURCE
DRAIN
DRAIN
GATE
(FLANGE)
GATE
SOURCE
DRAIN
(FLANGE)
Data Sheet
June 1999
File Number
4353.6
相關(guān)PDF資料
PDF描述
HUF75307T3ST 2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFET
HUF75307T3ST 2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFET
HUF75309D3 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs
HUF75309D3S 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs
HUF75309P3 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUF75307T3ST 功能描述:MOSFET 15a 55V N-Ch UltraFET 0.099 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF75307T3ST136 制造商:Rochester Electronics LLC 功能描述:- Bulk
HUF75309D3 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF75309D3S 功能描述:MOSFET 19a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF75309D3ST 功能描述:MOSFET 19a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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