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參數(shù)資料
| 型號(hào)： | HUF75307T3ST |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFET |
| 中文描述： | 2.6 A, 55 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 8/8頁 |
| 文件大小： | 325K |
| 代理商： | HUF75307T3ST |
8
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ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
http://www.intersil.com
SPICE Thermal Model
REV 15 Nov 97
HUF75307T3ST
CTHERM1 7 6 7.5e-5
CTHERM2 6 5 3.5e-4
CTHERM3 5 4 1.2e-3
CTHERM4 4 3 1.5e-2
CTHERM5 3 2 6.9e-2
CTHERM6 2 1 4.5e-1
RTHERM1 7 6 7.5e-2
RTHERM2 6 5 2.0e-1
RTHERM3 5 4 1.2
RTHERM4 4 3 3.3
RTHERM5 3 2 28
RTHERM6 2 1 90
RTHERM4
RTHERM6
RTHERM5
RTHERM3
RTHERM2
RTHERM1
CTHERM4
CTHERM6
CTHERM5
CTHERM3
CTHERM2
CTHERM1
1
2
3
4
5
6
7
JUNCTION
CASE
HUF75307T3ST
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HUF75307T3ST | 2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFET |
| HUF75309D3 | 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs |
| HUF75309D3S | 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs |
| HUF75309P3 | 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs |
| HUF75309P3 | 30V N-Channel PowerTrench MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HUF75307T3ST136 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HUF75309D3 | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75309D3S | 功能描述:MOSFET 19a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75309D3ST | 功能描述:MOSFET 19a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75309D3ST_NL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
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