- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371904 > HUF75309D3 (INTERSIL CORP) 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs PDF資料下載
參數(shù)資料
| 型號： | HUF75309D3 |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs |
| 中文描述： | 19 A, 55 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 102K |
| 代理商： | HUF75309D3 |
3
CAPACITANCE SPECIFICATIONS
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
(Figure 12)
-
350
-
pF
Output Capacitance
C
OSS
-
150
-
pF
Reverse Transfer Capacitance
C
RSS
-
39
-
pF
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 19A
I
SD
= 19A, dI
SD
/dt = 100A/
μ
s
I
SD
= 19A, dI
SD
/dt = 100A/
μ
s
-
-
1.25
V
Reverse Recovery Time
t
rr
-
-
50
ns
Reverse Recovered Charge
Q
RR
-
-
70
nC
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
T
C
, CASE TEMPERATURE (
o
C)
P
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
175
5
10
15
20
50
75
100
125
150
175
0
25
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
0.1
1
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-5
0.01
2
t, RECTANGULAR PULSE DURATION (s)
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
P
DM
t
1
t
2
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
Z
θ
J
,
T
HUF75309P3, HUF75309D3, HUF75309D3S
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HUF75309D3S | 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs |
| HUF75309P3 | 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs |
| HUF75309P3 | 30V N-Channel PowerTrench MOSFET |
| HUF75309D3 | 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs |
| HUF75309D3S | 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HUF75309D3S | 功能描述:MOSFET 19a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75309D3ST | 功能描述:MOSFET 19a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75309D3ST_NL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HUF75309P3 | 功能描述:MOSFET 19a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75309P3_Q | 功能描述:MOSFET 19a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。