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參數(shù)資料
| 型號： | HUF75329D3S |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs |
| 中文描述： | 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 173K |
| 代理商： | HUF75329D3S |
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
UltraFET is a trademark of Intersil Corporation. PSPICE is a registered trademark of MicroSim Corporation.
SABER
is a Copyright of Analogy, Inc. 1-888-INTERSIL or 321-724-7143
|
Copyright
Intersil Corporation 2000.
HUF75329G3, HUF75329P3, HUF75329S3S
49A, 55V, 0.024 Ohm, N-Channel UltraFET
Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET process.
This advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75329.
Features
49A, 55V
Ultra Low On-Resistance
, r
DS(ON)
= 0.024
Temperature Compensating PSPICE
and SABER
Models
- Available on the web at: www.Intersil.com
Thermal Impedance PSPICE and SABER Models
Peak Current vs Pulse Width Curve
UIS Rating Curve
Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC STYLE TO-247
JEDEC TO-220AB
JEDEC TO-263AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF75329G3
TO-247
75329G
HUF75329P3
TO-220AB
75329P
HUF75329S3S
TO-263AB
75329S
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUF75329S3ST.
D
G
S
SOURCE
DRAIN
GATE
DRAIN
(TAB)
GATE
SDRAIN
DRAIN
(FLANGE)
GATE
SOURCE
DRAIN
(FLANGE)
Data Sheet
January 2000
File Number
4361.7
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HUF75329P3 | 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs |
| HUF75329D3S | 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs |
| HUF75329G3 | 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs |
| HUF75329S3S | 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs |
| HUF75329D3 | 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HUF75329D3S | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| HUF75329D3ST | 功能描述:MOSFET 20a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75329D3ST | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET Transistor |
| HUF75329D3ST_R4820 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HUF75329G3 | 功能描述:MOSFET 20a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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