參數(shù)資料
型號： HUF75329G3
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs
中文描述： 49 A, 55 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
文件頁數(shù)： 5/9頁
文件大?。?/td> 173K
代理商： HUF75329G3
5
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT
Typical Performance Curves
(Continued)
1.0
1.5
2.0
2.5
-40
0
40
80
120
160
200
0.5
-80
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
80
μ
s PULSE TEST
V
GS
= 10V, I
D
= 49A
0.8
1.0
1.2
-40
0
40
80
120
160
200
0.6
-80
N
T
J
, JUNCTION TEMPERATURE (
o
C)
T
V
GS
= V
DS
, I
D
= 250
μ
A
0.4
0.9
1.0
1.1
1.2
-40
0
40
80
120
160
200
-80
T
J
, JUNCTION TEMPERATURE (
o
C)
N
I
D
= 250
μ
A
B
0.8
1200
600
0
0
10
20
30
40
50
C
900
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
300
C
ISS
C
OSS
C
RSS
60
1500
1800
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
10
8
6
4
0
V
G
,
V
DD
= 30V
2
15
20
35
0
Q
g
, GATE CHARGE (nC)
5
10
I
D
= 49A
I
D
= 36.75A
I
D
= 24.5A
I
D
= 12.25A
WAVEFORMS IN
DESCENDING ORDER:
25
30
HUF75329G3, HUF75329P3, HUF75329S3S
相關(guān)PDF資料
PDF描述
HUF75329S3S 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs
HUF75329D3 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs
HUF75333G3 Lead Acid Battery; Voltage Rating:6V; Battery Capacity:1Ah; Battery Terminals:Solder Tab RoHS Compliant: NA
HUF75333P3 66A, 55V, 0.016 Ohm. N-Channel UltraFET Power MOSFETs
HUF75333S3S 66A, 55V, 0.016 Ohm. N-Channel UltraFET Power MOSFETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUF75329P3 功能描述:MOSFET 20a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF75329S3 功能描述:MOSFET 20a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF75329S3S 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF75329S3ST 功能描述:MOSFET 20a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF75332G3 功能描述:MOSFET TO-247 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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