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參數(shù)資料
| 型號： | HUF75339G3 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs |
| 中文描述： | 75 A, 55 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 文件頁數(shù)： | 7/9頁 |
| 文件大?。?/td> | 108K |
| 代理商： | HUF75339G3 |
127
PSPICE Electrical Model
.SUBCKT HUF75339 2 1 3 ;
rev 23 February 1999
CA 12 8 2.80e-9
CB 15 14 2.80e-9
CIN 6 8 1.77e-9
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 59.2
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
LDRAIN 2 5 1.0e-9
LGATE 1 9 2.0e-9
LSOURCE 3 7 4.7e-10
K1 LSOURCE LGATE 0.0302
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 1.95e-3
RGATE 9 20 0.34
RLDRAIN 2 5 10
RLGATE 1 9 20
RLSOURCE 3 7 4.7
RSLC1 5 51 RSLCMOD 1.0e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 6.0e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*230),4))}
.MODEL DBODYMOD D (IS = 3.5e-12 RS = 3.02e-3 N = 1.02 XTI = 5.5 TRS1 = 3.0e-3 TRS2 = 4.0e-6 CJO = 2.9e-9 TT = 4.35e-8 M = 0.5)
.MODEL DBREAKMOD D (RS = 8.5e-2 TRS1 = 8.0e-4 TRS2 = 1.0e-7)
.MODEL DPLCAPMOD D (CJO = 2.25e-9 IS = 1e-30 M = 0.8 )
.MODEL MMEDMOD NMOS (VTO = 3.1 KP = 1.5 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG=0.34)
.MODEL MSTROMOD NMOS (VTO = 3.73 KP = 86.5 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 2.7 KP = 0.01 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG=3.4)
.MODEL RBREAKMOD RES (TC1 = 1.08e-3 TC2 = -2.5e-7)
.MODEL RDRAINMOD RES (TC1 = 2.05e-2 TC2 = 1.6e-5)
.MODEL RSLCMOD RES (TC1 = 6.0e-3 TC2 = -2.8e-6)
.MODEL RSOURCEMOD RES (TC1 = 5.5e-4 TC2 = 1.75e-5)
.MODEL RVTHRESMOD RES (TC1 = -3.65e-3 TC2 = -6.0e-6)
.MODEL RVTEMPMOD RES (TC1 = -2.3e-3 TC2 = -4.0e-6)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -9 VOFF= -5.5)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -5.5 VOFF= -9)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0 VOFF= 2.1)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 2.1 VOFF= 0)
.ENDS
NOTE: For further discussion of the PSPICE model, consult
A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options
; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
18
22
+
-
6
8
+
-
5
51
+
-
19
8
+
-
17
18
-
6
8
+
-
5
8
+
-
RBREAK
RVTEMP
VBAT
RVTHRES
IT
17
18
19
22
12
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS
EDS
14
8
13
8
14
13
MWEAK
EBREAK
DBODY
RSOURCE
SOURCE
3
11
7
LSOURCE
RLSOURCE
CIN
RDRAIN
EVTHRES
16
21
8
MMED
MSTRO
DRAIN
2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ESLC
RSLC1
51
10
5
50
RSLC2
1
GATE
RGATE
EVTEMP
9
ESG
LGATE
RLGATE
20
+
-
+
6
HUF75339G3, HUF75339P3, HUF75339S3S
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HUF75339S3S | 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs |
| HUF75343S3S | 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs |
| HUF75343G3 | 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs(75A, 55V, 0.009 Ω, N溝道UltraFET功率MOS場效應(yīng)管) |
| HUF75343P3 | 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs(75A, 55V, 0.009 Ω, N溝道UltraFET功率MOS場效應(yīng)管) |
| HUF75343S3 | 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HUF75339G3_NL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HUF75339P3 | 功能描述:MOSFET 75a 55V 0.012Ohm NCh UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75339P3_Q | 功能描述:MOSFET 75a 55V 0.012Ohm NCh UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75339S3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HUF75339S3S | 功能描述:MOSFET TO-263 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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