參數(shù)資料
型號: HUF75343G3
廠商: INTERSIL CORP
元件分類: 功率晶體管
英文描述: 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs(75A, 55V, 0.009 Ω, N溝道UltraFET功率MOS場效應(yīng)管)
中文描述: 75 A, 55 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
文件頁數(shù): 6/9頁
文件大小: 98K
代理商: HUF75343G3
6
Test Circuits and Waveforms
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
FIGURE 16. GATE CHARGE TEST CIRCUIT
FIGURE 17. GATE CHARGE WAVEFORM
FIGURE 18. SWITCHING TIME TEST CIRCUIT
FIGURE 19. RESISTIVE SWITCHING WAVEFORMS
t
P
V
GS
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
R
L
V
GS
+
-
V
DS
V
DD
DUT
I
G(REF)
V
DD
Q
g(TH)
Q
gs
V
GS
= 2V
Q
g(10)
V
GS
= 10V
Q
g(TOT)
V
GS
= 20V
V
DS
V
GS
I
g(REF)
0
0
Q
gd
V
GS
R
L
R
GS
DUT
+
-
V
DD
V
DS
V
GS
t
ON
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
0
HUF75343G3, HUF75343P3, HUF75343S3S
相關(guān)PDF資料
PDF描述
HUF75343P3 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs(75A, 55V, 0.009 Ω, N溝道UltraFET功率MOS場效應(yīng)管)
HUF75343S3 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs
HUF75343S3S 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs
HUF75343P3 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs
HUF75343G3 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUF75343G3 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N TO-247
HUF75343P3 功能描述:MOSFET 75A 55V N-CH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF75343P3 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N TO-220
HUF75343P3_Q 功能描述:MOSFET 75A 55V N-CH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF75343S3 功能描述:MOSFET 75a 55V 0.009Ohm NCh UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube