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參數資料
| 型號： | HUF75343P3 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs(75A, 55V, 0.009 Ω, N溝道UltraFET功率MOS場效應管) |
| 中文描述： | 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數： | 8/9頁 |
| 文件大?。?/td> | 98K |
| 代理商： | HUF75343P3 |
8
SABER Electrical Model
REV February 1999
template huf75343 n2, n1, n3
electrical n2, n1, n3
{
var i iscl
d..model dbodymod = (is = 2.35e-12, cjo = 6.34e-9, tt = 3.950e-8, m = 0.6)
d..model dbreakmod = ()
d..model dplcapmod = (cjo = 21.5e-10, is = 1e-30, n = 10, m = 0.730)
m..model mmedmod = (type=_n, vto = 3.30, kp = 5.49, is = 1e-30, tox = 1)
m..model mstrongmod = (type=_n, vto = 3.87, kp = 145, is = 1e-30, tox = 1)
m..model mweakmod = (type=_n, vto = 2.92, kp = 0.050, is = 1e-30, tox = 1)
sw_vcsp..model s1amod = (ron = 1e-5, roff = 0.1, von = -6.90, voff = -3.90)
sw_vcsp..model s1bmod = (ron = 1e-5, roff = 0.1, von = -3.90, voff = -6.90)
sw_vcsp..model s2amod = (ron = 1e-5, roff = 0.1, von = 0.39, voff = 3.39)
sw_vcsp..model s2bmod = (ron = 1e-5, roff = 0.1, von = 3.39, voff = 0.39)
c.ca n12 n8 = 3.95e-9
c.cb n15 n14 = 5.05e-9
c.cin n6 n8 = 2.68e-9
d.dbody n7 n71 = model=dbodymod
d.dbreak n72 n11 = model=dbreakmod
d.dplcap n10 n5 = model=dplcapmod
i.it n8 n17 = 1
l.ldrain n2 n5 = 1e-9
l.lgate n1 n9 = 2.60e-9
l.lsource n3 n7 = 1.10e-9
k.k1 i(l.lgate) i(l.lsource) = l(l.lgate), l(l.lsource), 0.0085
m.mmed n16 n6 n8 n8 = model=mmedmod, l = 1u, w = 1u
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l = 1u, w = 1u
m.mweak n16 n21 n8 n8 = model=mweakmod, l = 1u, w = 1u
res.rbreak n17 n18 = 1, tc1 = 1.04e-3, tc2 = 3.43e-7
res.rdbody n71 n5 = 2.21e-3, tc1 = 2.47e-3, tc2 = 3.97e-11
res.rdbreak n72 n5 = 9.1e-2, tc1 = -2.24e-4, tc2 = 5.23e-6
res.rdrain n50 n16 = 0.70e-3, tc1 = 4.44e-2, tc2 = 8.04e-5
res.rgate n9 n20 = 0.36
res.rldrain n2 n5 = 10
res.rlgate n1 n9 = 26.0
res.rlsource n3 n7 = 11.0
res.rslc1 n5 n51 = 1e-6, tc1 = 1.02e-4, tc2 = 2.07e-6
res.rslc2 n5 n50 = 1e3
res.rsource n8 n7 = 4.79e-3, tc1 = 0, tc2 = 0
res.rvtemp n18 n19 = 1, tc1 = -1.93e-3, tc2 = 1.38e-6
res.rvthres n22 n8 = 1, tc1 = -3.49e-3, tc2 = -1.27e-5
spe.ebreak n11 n7 n17 n18 = 58.39
spe.eds n14 n8 n5 n8 = 1
spe.egs n13 n8 n6 n8 = 1
spe.esg n6 n10 n6 n8 = 1
spe.evtemp n20 n6 n18 n22 = 1
spe.evthres n6 n21 n19 n8 = 1
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
v.vbat n22 n19 = dc = 1
equations {
i (n51->n50) + = iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/609))** 2.5))
}
}
18
22
+
-
6
8
+
-
19
8
+
-
17
18
-
6
8
+
-
5
8
+
-
RBREAK
RVTEMP
19
VBAT
RVTHRES
IT
17
18
22
12
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS
EDS
14
8
13
8
14
13
MWEAK
EBREAK
DBODY
RSOURCE
SOURCE
3
11
7
LSOURCE
RLSOURCE
CIN
RDRAIN
EVTHRES
16
21
8
MMED
MSTRO
DRAIN
2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ISCL
RSLC1
51
10
5
50
RSLC2
1
GATE
RGATE
EVTEMP
9
ESG
LGATE
RLGATE
20
+
-
+
6
RDBODY
RDBREAK
72
71
HUF75343G3, HUF75343P3, HUF75343S3S
相關PDF資料 |
PDF描述 |
|---|---|
| HUF75343S3 | 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs |
| HUF75343S3S | 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs |
| HUF75343P3 | 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs |
| HUF75343G3 | 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs |
| HUF75344G3 | 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HUF75343P3 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N TO-220 |
| HUF75343P3_Q | 功能描述:MOSFET 75A 55V N-CH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75343S3 | 功能描述:MOSFET 75a 55V 0.009Ohm NCh UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75343S3_NL | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HUF75343S3S | 功能描述:MOSFET 75a 55V 0.009Ohm NCh UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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