參數(shù)資料
型號： HUF75344P3
廠商： INTERSIL CORP
元件分類： 功率晶體管
英文描述： 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs(75A, 55V, 0.008 Ω,N溝道,UltraFET功率MOS場效應(yīng)管)
中文描述： 75 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù)： 5/9頁
文件大?。?/td> 135K
代理商： HUF75344P3
5
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT
Typical Performance Curves
(Continued)
0.5
1.0
1.5
2.0
2.5
-80
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
200
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10V, I
D
= 75A
V
GS
= V
DS
, I
D
= 250
μ
A
-80
-40
0
40
80
120
160
0.4
0.6
0.8
1.0
1.2
N
T
J
, JUNCTION TEMPERATURE (
o
C)
T
200
I
D
= 250
μ
A
1.2
1.1
0.9
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
B
200
1.0
3000
0
0
20
30
40
50
C
4500
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1500
60
10
C
ISS
C
RSS
C
OSS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
V
G
,
Q
g
, GATE CHARGE (nC)
0
2
4
6
8
10
0
25
50
75
100
V
DD
= 30V
I
D
= 75A
I
D
= 55A
I
D
= 35A
I
D
= 20A
WAVEFORMS IN
DESCENDING ORDER:
HUF75344G3, HUF75344P3, HUF75344S3S
相關(guān)PDF資料
PDF描述
HUF75344G3 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs
HUF75344S3S 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs
HUF75344P3 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs
HUF75531SK8 6A, 80V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET
HUF75531SK8T 6A, 80V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUF75344P3_NL 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述:
HUF75344S3 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
HUF75344S3S 制造商:Harris Corporation 功能描述:
HUF75344S3ST 功能描述:MOSFET 55V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF75345G3 功能描述:MOSFET 75a 55V 0.007Ohm NCh UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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