- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371905 > HUF75344P3 (FAIRCHILD SEMICONDUCTOR CORP) 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs PDF資料下載
參數(shù)資料
| 型號： | HUF75344P3 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs |
| 中文描述： | 75 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 135K |
| 代理商： | HUF75344P3 |
4
FIGURE 4. PEAK CURRENT CAPABILITY
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
Typical Performance Curves
(Continued)
10
1
10
0
10
-1
10
-2
10
-3
10
-4
10
-5
50
100
2000
T
C
= 25
o
C
I = I
25
175 - T
C
150
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
V
GS
= 10V
I
D
,
t, PULSE WIDTH (s)
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
1000
V
GS
= 20V
10
100
1000
10
100
1
1
200
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
T
J
= MAX RATED
T
C
= 25
o
C
100
μ
s
10ms
1ms
V
DSS(MAX)
= 55V
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
If R = 0
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
1
10
0.01
1000
10
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
0.1
100
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0
30
60
90
120
150
0
1
2
3
4
V
GS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
C
V
GS
= 5V
V
GS
= 6V
V
GS
= 20V
V
GS
= 7V
0
3
4.5
6
7.5
1.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
0
30
60
90
120
I
D
150
175
o
C
-55
o
C
25
o
C
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
PULSE DURATION = 80
μ
s
HUF75344G3, HUF75344P3, HUF75344S3S
相關PDF資料 |
PDF描述 |
|---|---|
| HUF75531SK8 | 6A, 80V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET |
| HUF75531SK8T | 6A, 80V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET |
| HUF75531SK8 | 6A, 80V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET |
| HUF75631SK8 | 5.5A, 100V, 0.039 Ohm, N-Channel, UltraFET Power MOSFET |
| HUF75631P3 | 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HUF75344P3_NL | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HUF75344S3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HUF75344S3S | 制造商:Harris Corporation 功能描述: |
| HUF75344S3ST | 功能描述:MOSFET 55V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF75345G3 | 功能描述:MOSFET 75a 55V 0.007Ohm NCh UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復。