參數(shù)資料
型號(hào)： HUF76105DK8
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： 5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET
中文描述： 5 A, 30 V, 0.072 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
封裝： SOIC-8
文件頁數(shù)： 1/12頁
文件大?。?/td> 123K
代理商： HUF76105DK8
8-1
File Number
4719.1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
UltraFET is a trademark of Intersil Corporation. PSPICE is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
HUF76105SK8
5.5A, 30V 0.050 Ohm, N-Channel, Logic
Level UltraFET Power MOSFET
This N-Channel power MOSFET is
manufactured using the innovative
UltraFET process. This advanced
process technology achieves the
lowest possible on-resistance per silicon area, resulting in
outstanding performance. This device is capable of
withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators, switching
converters, motor drivers, relay drivers, low-voltage bus
switches, and power management in portable and battery-
operated products.
Formerly developmental type TA76105.
Features
Logic Level Gate Drive
5.5A, 30V
Ultra Low On-Resistance, r
DS(ON)
= 0.050
Simulation Models
- Temperature Compensated PSPICE
and SABER
Electrical Models
- SPICE and SABER Thermal Impedance Models
Available on the WEB at:
www.semi.Intersil.com/families/models.htm
Peak Current vs Pulse Width Curve
UIS Rating Curve
Transient Thermal Impedance Curve vs Board Mounting
Area
Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC MS-012AA
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF76105SK8
MS-012AA
76105SK8
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF76105SK8T.
SOURCE(2)
DRAIN(8)
NC(1)
DRAIN(7)
DRAIN(6)
DRAIN(5)
SOURCE(3)
GATE(4)
BRANDING DASH
1
2
3
4
5
Data Sheet
May 1999
相關(guān)PDF資料
PDF描述
HUF76121SK8 8A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
HUF76121D3 20A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
HUF76121P3 47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
HUF76121D3S 20A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
HUF76121S3S 47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUF76105DK8T 功能描述:MOSFET USE 512-FDS6930A Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76105SK8 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:5.5A, 30V, 0.050 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
HUF76105SK8T 功能描述:MOSFET 5a 30V 0.050 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76107D3 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76107D3S 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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