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參數(shù)資料
| 型號： | HUF76121S3S |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs |
| 中文描述： | 47 A, 30 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁數(shù)： | 5/11頁 |
| 文件大小： | 124K |
| 代理商： | HUF76121S3S |
5
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. SATURATION CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
10
20
30
40
1
2
3
4
0
0
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
150
o
C
-55
o
C
V
DD
= 15V
25
o
C
PULSE DURATION = 250
μ
s
DUTY CYCLE = 0.5% MAX
10
20
30
40
1
2
3
4
0
0
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 3V
V
GS
= 3.5V
V
GS
= 4V
V
GS
= 5V
V
GS
= 10V
PULSE DURATION = 250
μ
s
DUTY CYCLE = 0.5% MAX
T
A
= 25
o
C
15
20
25
30
35
40
2
4
6
8
10
I
D
= 2.3A
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 8A
r
D
,
O
)
PULSE DURATION = 250
μ
s
DUTY CYCLE = 0.5% MAX
0.8
1.0
1.2
1.4
1.6
-80
-40
0
40
80
120
160
0.6
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
V
GS
= 10V, I
D
= 8A
PULSE DURATION = 250
μ
s
DUTY CYCLE = 0.5% MAX
-80
-40
0
40
80
120
160
0.6
0.8
1.2
N
T
J
, JUNCTION TEMPERATURE (
o
C)
T
V
GS
= V
DS
, I
D
= 250
μ
A
1.0
1.2
1.1
1.0
0.9-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
B
I
D
= 250
μ
A
HUF76121SK8
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PDF描述 |
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| HUF76121D3 | 20A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs |
| HUF76121D3S | 20A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs |
| HUF76121P3 | 47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs |
| HUF76121S3S | 47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs |
| HUF76121S3ST | 47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HUF76121S3ST | 功能描述:MOSFET USE 512-FDB6030BL RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76121SK8 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:8A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
| HUF76121SK8T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 8A I(D) | SO |
| HUF76122P3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HUF76129D3 | 功能描述:MOSFET 20a 30V N-Ch Logic Level 0.016Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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