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參數(shù)資料
| 型號(hào)： | HUF76121S3ST |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs |
| 中文描述： | 47 A, 30 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | TO-263AB, 3 PIN |
| 文件頁(yè)數(shù)： | 4/11頁(yè) |
| 文件大?。?/td> | 124K |
| 代理商： | HUF76121S3ST |
4
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. PEAK CURRENT CAPABILITY
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
Typical Performance Curves
(Continued)
0.001
0.01
0.1
1
10
-5
10
-4
10
-3
10
-2
t, RECTANGULAR PULSE DURATION (s)
10
-1
10
0
10
1
10
2
10
3
Z
θ
J
,
T
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JA
x R
θ
JA
+ T
A
P
DM
t
1
t
2
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
R
θ
JA
= 50
o
C/W
10
10
100
1000
5
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
I
D
,
t, PULSE WIDTH (s)
V
GS
= 5V
R
θ
JA
= 50
o
C/W
V
GS
= 10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
T
C
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I = I
25
150 - T
A
125
T
J
= MAX RATED
T
A
= 25
C
100
μ
s
10ms
1ms
BV
DSS MAX
= 30V
10
100
1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1
100
500
10
I
D
,
LIMITED BY r
DS(ON)
AREA MAY BE
1
10
100
100
1
0.01
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
10
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
t
0.1
HUF76121SK8
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|---|---|
| HUF76129S3S | 56A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs |
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| HUF76129D3ST | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 20A I(D) | TO-252AA |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HUF76121SK8 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:8A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
| HUF76121SK8T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 8A I(D) | SO |
| HUF76122P3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HUF76129D3 | 功能描述:MOSFET 20a 30V N-Ch Logic Level 0.016Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76129D3S | 功能描述:MOSFET 20a 30V N-Ch Logic Level 0.016Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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