參數(shù)資料
型號(hào): HUF76129P3
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 功率晶體管
英文描述: 56A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
中文描述: 56 A, 30 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù): 10/10頁
文件大?。?/td> 108K
代理商: HUF76129P3
10
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
http://www.intersil.com
SPICE Thermal Model
REV August 1998
HUF76129
CTHERM1 th 6 1.10e-5
CTHERM2 6 5 2.70e-2
CTHERM3 5 4 3.90e-2
CTHERM4 4 3 1.00e-2
CTHERM5 3 2 2.30e-2
CTHERM6 2 tl 1.80
RTHERM1 th 6 1.00e-4
RTHERM2 6 5 5.00e-4
RTHERM3 5 4 2.90e-2
RTHERM4 4 3 4.80e-1
RTHERM5 3 2 2.80e-1
RTHERM6 2 tl 1.00e-1
Saber Thermal Model
Saber thermal model HUF76129
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th c2 =1.10e-5
ctherm.ctherm2 c2 c3 =2.70e-2
ctherm.ctherm3 c3 c4 =3.90e-2
ctherm.ctherm4 c4 c5 =1.00e-2
ctherm.ctherm5 c5 c6 =2.30e-2
ctherm.ctherm6 c6 tl=1.80
rtherm.rtherm1 th c2 =1.00e-4
rtherm.rtherm2 c2 c3 =5.00e-4
rtherm.rtherm3 c3 c4 =2.90e-2
rtherm.rtherm4 c4 c5 =4.80e-1
rtherm.rtherm5 c5 c6 =2.80e-1
rtherm.rtherm6 c6 tl=1.00e-1
}
RTHERM4
RTHERM6
RTHERM5
RTHERM3
RTHERM2
RTHERM1
CTHERM4
CTHERM6
CTHERM5
CTHERM3
CTHERM2
CTHERM1
tl
2
3
4
5
6
th
JUNCTION
CASE
HUF76129P3, HUF76129S3S
相關(guān)PDF資料
PDF描述
HUF76129S3S 56A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
HUF76131SK8 10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
HUF76131SK8T TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 10A I(D) | SO
HUF76131SK8 10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
HUF76143S3S XTAL MTL SMT HC49/USM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUF76129S3 功能描述:MOSFET 56a 30V N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76129S3S 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76129S3ST 功能描述:MOSFET 56a 30V N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76129S3STK 功能描述:MOSFET 56a 30V N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76131SK8 功能描述:MOSFET 10a 30V 0.013 Ohm 1Ch HS Logic Gate RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube