參數(shù)資料
型號： HUF76131SK8T
廠商： HARRIS SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 10A I(D) | SO
中文描述： 10 A, 30 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
文件頁數(shù)： 2/10頁
文件大小： 197K
代理商： HUF76131SK8T
2
Absolute Maximum Ratings
T
A
= 25
o
C, Unless Otherwise Specified
HUF76131SK8
30
30
±
16
UNITS
V
V
V
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DSS
Drain to Gate Voltage (R
GS
= 20k
) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Drain Current
Continuous (Figure 2) (Notes 2, 3). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
10
Figure 5
Figure 6
2.5
0.02
-55 to 150
A
W
W/
o
C
o
C
300
260
o
C
o
C
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
PARAMETER
Drain to Source Breakdown Voltage
Gate to Source Threshold Voltage
Zero Gate Voltage Drain Current
T
A
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
TEST CONDITIONS
MIN
30
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
0.017
0.015
0.011
-
15
61
33
36
-
39
22
1.53
4.00
9.50
1605
685
115
-
-
-
MAX
-
-
1
250
±
100
0.018
0.017
0.013
115
-
-
-
-
105
47
26
1.85
-
-
-
-
-
50
143.4
177.3
UNITS
V
V
μ
A
μ
A
nA
ns
ns
ns
ns
ns
ns
nC
nC
nC
nC
nC
pF
pF
pF
o
C/W
o
C/W
o
C/W
I
D
= 250
μ
A, V
GS
= 0V (Figure 11)
V
GS
= V
DS
, I
D
= 250
μ
A (Figure 10)
V
DS
= 25V, V
GS
= 0V
V
DS
= 25V, V
GS
= 0V, T
A
= 150
o
C
V
GS
=
±
16V
I
D
= 10A, V
GS
= 4.5V (Figures 9,14)
I
D
= 10A, V
GS
= 5V
I
D
= 10A, V
GS
= 10V
V
DD
= 15V, I
D
10A, R
L
= 1.5
, V
GS
=
5V,
R
GS
= 6.8
(Figure 15)
Gate to Source Leakage Current
Drain to Source On Resistance
I
GSS
r
DS(ON)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Ambient
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Q
g(TOT)
Q
g(5)
Q
g(TH)
Q
gs
Q
gd
C
ISS
C
OSS
C
RSS
R
θ
JA
V
GS
= 0V to 10V V
DD
= 15V, I
D
10A,
R
L
= 1.5
,
I
g(REF)
= 1.0mA
(Figure 13)
V
GS
= 0V to 1V
V
GS
= 0V to 5V
V
DS
= 25V, V
GS
= 0V, f = 1MHz
(Figure 12)
Pad Area = 0.76 in
2
(Note 2)
Pad Area = 0.054 in
2
(See TB377)
Pad Area = 0.0115 in
2
(See TB377)
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
SYMBOL
V
SD
TEST CONDITIONS
MIN
-
-
-
-
TYP
-
-
-
-
MAX
1.25
1.1
57
81
UNITS
V
V
ns
nC
I
SD
= 10A
I
SD
= 2.3A
I
SD
= 2.3A, dI
SD
/dt = 100A/
μ
s
I
SD
= 2.3A, dI
SD
/dt = 100A/
μ
s
Reverse Recovery Time
Reverse Recovered Charge
NOTES:
2. 50
o
C/W measured using FR-4 board with 0.76 in
2
footprint at 10 seconds.
3. 177.3
o
C/W measured using FR-4 board with 0.0115 in
2
footprint at 1000 seconds.
t
rr
Q
RR
HUF76131SK8
相關(guān)PDF資料
PDF描述
HUF76131SK8 10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
HUF76143S3S XTAL MTL SMT HC49/USM
HUF76143P3 75A, 30V, 0.0055 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
HUF76143S3S 75A, 30V, 0.0055 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
HUF76143P3 75A, 30V, 0.0055 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUF76131SK8T_NB82084 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述:
HUF76132P3 功能描述:MOSFET 75a 30V N-Channel Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76132S3 制造商:Rochester Electronics LLC 功能描述:- Bulk
HUF76132S3S 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76132S3ST 功能描述:MOSFET 75a 30V N-Channel Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*