參數(shù)資料
型號(hào)： HUF76143P3
廠商： HARRIS SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： 75A, 30V, 0.0055 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
中文描述： 75 A, 30 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁(yè)數(shù)： 8/10頁(yè)
文件大?。?/td> 109K
代理商： HUF76143P3
6-173
PSPICE Electrical Model
SUBCKT HUF76143 2 1 3 ;
REV March 1998
CA 12 8 5.2e-9
CB 15 14 5e-9
CIN 6 8 3.65e-9
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 39.38
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 2.6e-9
LSOURCE 3 7 1.1e-9
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 1.5e-3
RGATE 9 20 0.92
RLDRAIN 2 5 10
RLGATE 1 9 26
RLSOURCE 3 7 11
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 3e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*425),4))}
.MODEL DBODYMOD D (IS = 1.2e-11 RS = 2.65e-3 TRS1 = 2.3e-3 TRS2 = -4.2e-6 CJO = 5.45e-9 TT = 3.9e-8 XTI = 4.3 N = 1.03 M = 0.43)
.MODEL DBREAKMOD D (RS = 8.5e-2 TRS1 =0 TRS2 =0)
.MODEL DPLCAPMOD D (CJO = 2.6e-9 IS = 1e-30 N = 10 M = 0.7)
.MODEL MMEDMOD NMOS (VTO = 1.9 KP = 10 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 0.92)
.MODEL MSTROMOD NMOS (VTO = 2.26KP = 215 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 1.62 KP = 0.1 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 9.2 RS = 0.1)
.MODEL RBREAKMOD RES (TC1 = 9.8e-4 TC2 = -4e-7)
.MODEL RDRAINMOD RES (TC1 = 1e-2 TC2 = 0)
.MODEL RSLCMOD RES (TC1 = 3e-3 TC2 = -2e-5)
.MODEL RSOURCEMOD RES (TC1 = 5e-4 TC2 = 1.1e-5)
.MODEL RVTHRESMOD RES (TC = -2.2e-3 TC2 = -6e-6)
.MODEL RVTEMPMOD RES (TC1 = -1.45e-3 TC2 = -2e-6)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -5 VOFF= -2)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2 VOFF= -5)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -1.5 VOFF= 1)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 1 VOFF= -1.5)
.ENDS
NOTE: For further discussion of the PSPICE model, consult
A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options
; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
18
22
+
-
6
8
+
-
5
51
+
-
19
8
+
-
17
18
-
6
8
+
-
5
8
+
-
RBREAK
RVTEMP
VBAT
RVTHRES
IT
17
18
19
22
12
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS
EDS
14
8
13
8
14
13
MWEAK
EBREAK
DBODY
RSOURCE
SOURCE
3
11
7
LSOURCE
RLSOURCE
CIN
RDRAIN
EVTHRES
16
21
8
MMED
MSTRO
DRAIN
2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ESLC
RSLC1
51
10
5
50
RSLC2
1
GATE
RGATE
EVTEMP
9
ESG
LGATE
RLGATE
20
+
-
+
6
HUF76143P3, HUF76143S3S
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HUF76143S3 功能描述:MOSFET 75a 30V 0.0055 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76143S3S 功能描述:MOSFET 75a 30V 0.0055 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76143S3ST 功能描述:MOSFET USE 512-FDB8874 Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76145P3 功能描述:MOSFET 75a 30V 0.0045 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76145S3 功能描述:MOSFET 75a 30V 0.0045 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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