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參數(shù)資料
| 型號： | HUF76407P3 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 12A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
| 中文描述： | 13 A, 60 V, 0.117 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 375K |
| 代理商： | HUF76407P3 |
1
File Number
4712.4
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
UltraFET is a trademark of Intersil Corporation. PSPICE is a registered trademark of MicroSim Corporation.
SABER
is a Copyright of Analogy, Inc. http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
HUF76407DK8
3.5A, 60V, 0.105 Ohm, Dual N-Channel,
Logic Level UltraFET Power MOSFET
Packaging
Symbol
Features
Ultra Low On-Resistance
- r
DS(ON)
= 0.090
,
V
GS
=
10V
- r
DS(ON)
= 0.105
,
V
GS
=
5V
Simulation Models
- Temperature Compensated PSPICE
and SABER
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.semi.Intersil.com
Peak Current vs Pulse Width Curve
UIS Rating Curve
Transient Thermal Impedance Curve vs Board Mounting
Area
Switching Time vs R
GS
Curves
Ordering Information
Absolute Maximum Ratings
T
A
= 25
o
C, Unless Otherwise Specified
JEDEC MS-012AA
BRANDING DASH
1
2
3
4
5
DRAIN 1 (8)
SOURCE1 (1)
DRAIN 1 (7)
DRAIN 2 (6)
DRAIN 2 (5)
SOURCE2 (3)
GATE2 (4)
GATE1 (2)
PART NUMBER
PACKAGE
BRAND
HUF76407DK8
MS-012AA
76407DK8
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF76407DK8T.
HUF76407DK8
60
60
±
16
UNITS
V
V
V
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous (T
A
= 25
o
C, V
GS
= 5V) (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
A
= 25
o
C, V
GS
= 10V) (Figure 2) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
A
= 100
o
C, V
GS
= 5V) (Note 3). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
A
= 100
o
C, V
GS
= 4.5V) (Figure 2) (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS
Power Dissipation (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
NOTES:
1. T
J
= 25
o
C to 125
o
C.
2. 50
o
C/W measured using FR-4 board with 0.76 in
2
(490.3 mm
2
) copper pad at 1 second.
3. 228
o
C/W measured using FR-4 board with 0.006 in
2
(3.87 mm
2
) copper pad at 1000 seconds.
3.5
3.8
1.0
1.0
Figure 4
A
A
A
A
Figures 6, 17, 18
2.5
20
-55 to 150
W
mW/
o
C
o
C
300
260
o
C
o
C
CAUTION:
Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Data Sheet
October 1999
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HUF76407P3_Q | 功能描述:MOSFET 11a 60V 0.107 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76409D3 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76409D3S | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76409D3ST | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76409D3ST_R4921 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
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