- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371906 > HUF76429D3ST (FAIRCHILD SEMICONDUCTOR CORP) TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 20A I(D) | TO-252AA PDF資料下載
參數(shù)資料
| 型號： | HUF76429D3ST |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 20A I(D) | TO-252AA |
| 中文描述： | 20 A, 60 V, 0.029 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | TO-252AA, 3 PIN |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 332K |
| 代理商： | HUF76429D3ST |
4
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. SATURATION CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
10
100
10
100
300
1
1
100
μ
s
10ms
1ms
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
T
C
= 25
o
C
T
J
= MAX RATED
SINGLE PULSE
DS(ON)
LIMITED BY r
OPERATION IN THIS
10
100
0.001
0.01
0.1
1
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
If R = 0
50
0
10
20
30
40
1.5
2
V
GS
, GATE TO SOURCE VOLTAGE (V)
2.5
3
3.5
4
I
D
T
J
= 25
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 175
o
C
T
J
= -55
o
C
50
0
10
20
30
40
0
1
2
3
4
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 3V
V
GS
= 3.5V
V
GS
= 5V
V
GS
= 4V
V
GS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
I
D
= 22A
10
20
30
40
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 44A
r
D
,
O
)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
0.5
1.0
1.5
2.0
2.5
-80
-40
0
40
80
120
200
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
V
GS
= 10V, I
D
= 47A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
160
HUF76429P3, HUF76429S3S
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HUF76429S3S | 44A, 60V, 0.025 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
| HUF76443S3S | 75A, 60V, 0.0095 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
| HUF76443P3 | 75A, 60V, 0.0095 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(75A, 60V, 0.0095Ω N溝道邏輯電平功率MOS場效應(yīng)管) |
| HUF76443S3S | 75A, 60V, 0.0095 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
| HUF76443P3 | 3-V to 5.5-V Dual RS-232 Port 48-SSOP -40 to 85 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HUF76429D3ST_S2457 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HUF76429D3T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 20A I(D) | TO-251AA |
| HUF76429P3 | 功能描述:MOSFET 44a 60V 0.025 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76429S3S | 功能描述:MOSFET 44a 60V 0.025 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76429S3ST | 功能描述:MOSFET 44a 60V 0.025 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復。