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參數(shù)資料
| 型號(hào)： | HUF76633P3 |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
| 中文描述： | 39 A, 100 V, 0.037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁(yè)數(shù)： | 4/9頁(yè) |
| 文件大小： | 337K |
| 代理商： | HUF76633P3 |
4
HUF76633P3, HUF76633S3S
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. SATURATION CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
10
100
1
10
100
200
1
300
100
μ
s
10ms
1ms
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
LIMITED BY r
DS(ON)
AREA MAY BE
T
J
= MAX RATED
SINGLE PULSE
T
C
= 25
o
C
0.001
0.01
0.1
1
10
10
100
1
500
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
If R = 0
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
20
40
60
80
1.5
2.0
2.5
3.0
3.5
4.0
0
I
D
V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 175
o
C
T
J
= 25
o
C
T
J
= -55
o
C
20
40
60
80
0
1
2
3
4
5
0
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 3V
V
GS
= 3.5V
V
GS
= 5V
V
GS
= 4V
V
GS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
C
30
35
40
45
50
2
4
6
8
10
25
I
D
= 15A
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 39A
r
D
,
O
)
I
D
= 27A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
C
1.0
1.5
2.0
2.5
3.0
-80
-40
0
40
80
120
160
200
0.5
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
V
GS
= 10V, I
D
= 39A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HUF76633P3T | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 38A I(D) | TO-220AB |
| HUF76633S3S | 38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(38A, 100V, 0.036Ω N溝道邏輯電平功率MOS場(chǎng)效應(yīng)管) |
| HUF76633S3S | 38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
| HUF76633P3 | 38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
| HUGD50 | Hold-Up Solution 16-40V & 9-36V DC/DC Converter Compatible Metallic Case |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HUF76633P3_12 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET?? Power MOSFET |
| HUF76633P3_F085 | 功能描述:MOSFET Single NCh 55V 7mOhm Power MOS UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76633P3_NL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HUF76633P3_R4883 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HUF76633P3T | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 38A I(D) | TO-220AB |
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