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Microsemi
Watertown Division
580 Pleasant Street, Watertown, MA. 02172, 617-926-0404, Fax: 617-924-1235
Page 1
Copyright
2000
MSC0874.PDF 2000-08-23
W
M
.
C
W ATERTOW N DIVISION
HUM2010/HUM2015/HUM2020
PIN DIODE HIGH POWER STUD
D E S C R I P T I O N
With high isolation, low loss, and low distortion characteristics, this
Microsemi Power PIN diode is perfect for the high power switching
applications where size and power handling capability are critical.
Its advantages also include the low forward bias resistance and high
zero bias impedance that are essential for low loss, high isolation and wide
bandwidth performance.
Hermetically sealed, SOGO passivated PIN chips with full-faced
metallurgical bonds on both sides to achieve high reliability and high surge
capability.
IMPORTANT:
For the most current data, consult
MICROSEMI
’s website:
http://www.microsemi.com
K E Y F E A T U R E S
!"
High Power Stud Mount
Package
!"
High Zero Bias Impedance
!"
Very Low Inductance and
Capacitance
!"
No Internal Lead Straps
!"
Small Mechanical Outline
APPLICAT IONS /BE NEFIT S
MRI Applications
High Power Antenna Switching
A B S O L U T E M A X I M U M R A T I N G S
Maximum Reverse Voltage
Average Power Dissipation @ Stud = 50°C
Non-Repetitive Sinusoidal Surge Current (8.3 ms)
Storage Temperature Range
Operating Temperature Range
Thermal Resistance
1000/1500/2000 V
13 W
100 A
65°C to +175°C
55°C to +150°C
7.5°C / W
E L E C T R I C A L S P E C I F I C A T I O N S [25°C]
Min
Typ
Max
Test
Units
pF
μ
A
μ
s
K
V
Conditions
Diode Resistance R
S
Capacitance C
T
Reverse Current I
R
Carrier Lifetime
τ
Parallel Resistance R
P
Forward Voltage V
f
0.10
3.4
0.20
4.0
10
F = 4 MHz, I
f
=0.5 A
F = 1 MHz, 100 V
V
R
@ Rated Voltage
10
200
30
0.85
I
f
=10 mA / 100 V
F = 10 MHz, 100 V
1.0
I
f
= 0.5 A
V oltage Ratings [25°C]
Reverse Voltage
(V
R
) - Volts
I
R
= 10
μ
A
1000V
1500V
2000V
Part type
HUM2010
HUM2015
HUM2020
H
U
M
2
0
1
0
/
1
5
/
2
0