參數(shù)資料
型號(hào): HVM187
廠商: Hitachi,Ltd.
英文描述: Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator
中文描述: 硅PIN二極管外延平面高頻衰減器
文件頁(yè)數(shù): 2/6頁(yè)
文件大小: 28K
代理商: HVM187
HVM187S
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Value
Unit
Reverse voltage
V
R
I
F
Pd*
60
V
Forward current
50
mA
Power dissipation
100
mW
Junction temperature
Tj
125
°
C
°
C
Storage temperature
Note:
Per one device
Tstg
–55 to +125
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Forward voltage
V
F
I
R
C
1.0
V
I
F
= 10mA
V
R
= 60V
V
R
= 0V, f = 1MHz
I
F
= 10mA, f = 100MHz
*C = 200pF, Both forward and
reverse direction 1 pulse.
Reverse current
100
nA
Capacitance
2.4
pF
Forward resistance
r
f
3.5
5.5
ESD-Capability
200
V
Note:
Failure criterion; I
R
100nA at V
R
= 60V
0
0.2
0.4
0.6
0.8
1.0
10
10
–6
10
–8
10
–10
10
–12
Forward voltage V (V)
F
F
10
–2
–4
Fig.1 Forward current Vs. Forward voltage
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參數(shù)描述
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