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參數(shù)資料
| 型號(hào)： | HX6356XEHT |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Silver Mica Capacitor; Capacitance:300pF; Capacitance Tolerance:+/- 2%; Series:CD10; Voltage Rating:300VDC; Capacitor Dielectric Material:Mica; Termination:Radial Leaded; Lead Pitch:3.6mm; Leaded Process Compatible:Yes RoHS Compliant: Yes |
| 中文描述： | 32K的× 8靜態(tài)RAM的絕緣硅 |
| 文件頁(yè)數(shù)： | 8/12頁(yè) |
| 文件大?。?/td> | 145K |
| 代理商： | HX6356XEHT |
HX6356
8
DYNAMIC ELECTRICAL CHARACTERISTICS
Read Cycle
The RAM is asynchronous in operation, allowing the read
cycle to be controlled by address, chip select (NCS), or chip
enable (CE) (refer to Read Cycle timing diagram). To
perform a valid read operation, both chip select and output
enable (NOE) must be low and chip enable and write enable
(NWE) must be high. The output drivers can be controlled
independently by the NOE signal. Consecutive read cycles
can be executed with NCS held continuously low, and with
CE held continuously high, and toggling the addresses.
For an address activated read cycle, NCS and CE must be
valid prior to or coincident with the activating address edge
transition(s). Any amount of toggling or skew between ad-
dress edge transitions is permissible; however, data outputs
will become valid TAVQV time following the latest occurring
address edge transition. The minimum address activated
read cycle time is TAVAV. When the RAM is operated at the
minimum address activated read cycle time, the data outputs
will remain valid on the RAM I/O until TAXQX time following
the next sequential address transition.
To control a read cycle with NCS, all addresses and CE
must be valid prior to or coincident with the enabling NCS
edge transition. Address or CE edge transitions can occur
later than the specified setup times to NCS, however, the
valid data access time will be delayed. Any address edge
transition, which occurs during the time when NCS is low,
will initiate a new read access, and data outputs will not
become valid until TAVQV time following the address edge
transition. Data outputs will enter a high impedance state
TSHQZ time following a disabling NCS edge transition.
To control a read cycle with CE, all addresses and NCS
must be valid prior to or coincident with the enabling CE
edge transition. Address or NCS edge transitions can
occur later than the specified setup times to CE; however,
the valid data access time will be delayed. Any address
edge transition which occurs during the time when CE is
high will initiate a new read access, and data outputs will
not become valid until TAVQV time following the address
edge transition. Data outputs will enter a high impedance
state TELQZ time following a disabling CE edge transition.
Write Cycle
The write operation is synchronous with respect to the
address bits, and control is governed by write enable
(NWE), chip select (NCS), or chip enable (CE) edge
transitions (refer to Write Cycle timing diagrams). To per-
form a write operation, both NWE and NCS must be low,
and CE must be high. Consecutive write cycles can be
performed with NWE or NCS held continuously low, or CE
held continuously high. At least one of the control signals
must transition to the opposite state between consecutive
write operations.
The write mode can be controlled via three different control
signals: NWE, NCS, and CE. All three modes of control are
similar except the NCS and CE controlled modes actually
disable the RAM during the write recovery pulse. Both CE
and NCS fully disable the RAM decode logic and input
buffers for power savings. Only the NWE controlled mode
is shown in the table and diagram on the previous page for
simplicity. However, each mode of control provides the
same write cycle timing characteristics. Thus, some of the
parameter names referenced below are not shown in the
write cycle table or diagram, but indicate which control pin
is in control as it switches high or low.
To write data into the RAM, NWE and NCS must be held low
and CE must be held high for at least TWLWH/TSLSH/
TEHEL time. Any amount of edge skew between the
signals can be tolerated, and any one of the control signals
can initiate or terminate the write operation. For consecu-
tive write operations, write pulses must be separated by the
minimum specified TWHWL/TSHSL/TELEH time. Address
inputs must be valid at least TAVWL/TAVSL/TAVEH time
before the enabling NWE/NCS/CE edge transition, and
must remain valid during the entire write time. A valid data
overlap of write pulse width time of TDVWH/TDVSH/TDVEL,
and an address valid to end of write time of TAVWH/
TAVSH/TAVEL also must be provided for during the write
operation. Hold times for address inputs and data inputs
with respect to the disabling NWE/NCS/CE edge transition
must be a minimum of TWHAX/TSHAX/TELAX time and
TWHDX/TSHDX/TELDX time, respectively. The minimum
write cycle time is TAVAV.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HX6356-QFC | 32K x 8 STATIC RAM-SOI |
| HX6356-QFT | 32K x 8 STATIC RAM-SOI |
| HX6356-QHC | 32K x 8 STATIC RAM-SOI |
| HX6356-QHT | 32K x 8 STATIC RAM-SOI |
| HX6356PQRT | 32K x 8 STATIC RAM-SOI |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HX6356XENC | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:32K x 8 STATIC RAM-SOI |
| HX6356XENT | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:32K x 8 STATIC RAM-SOI |
| HX6356XERC | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:32K x 8 STATIC RAM-SOI |
| HX6356XERT | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:32K x 8 STATIC RAM-SOI |
| HX6356XQFC | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:32K x 8 STATIC RAM-SOI |
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