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HX6356
6
HIGH
IMPEDANCE
NCS
NOE
DATA VALID
CE
T
AVAVR
T
AVQV
T
SLQV
T
AXQX
T
SLQX
T
SHQZ
T
EHQX
T
EHQV
T
GLQX
T
GLQV
T
GHQZ
T
ELQZ
ADDRESS
(NWE = high)
DATA OUT
READ CYCLE AC TIMING CHARACTERISTICS (1)
(1) Test conditions: input switching levels VIL/VIH=0.5V/VDD-0.5V (CMOS), VIL/VIH=0V/3V (TTL), input rise and fall times <1 ns/V, input and
output timing reference levels shown in the Tester AC Timing Characteristics table, capacitive output loading C
>50 pF, or equivalent
capacitive output loading C
=5 pF for TSHQZ, TELQZ TGHQZ. For C
L
>50 pF, derate access times by 0.02 ns/pF (typical).
(2) Typical operating conditions: VDD=5.0 V, TA=25
°
C, pre-radiation.
(3) Worst case operating conditions: VDD=4.5 V to 5.5 V, post total dose at 25
°
C.
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相關PDF資料 |
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| HX6356XQNT | 32K x 8 STATIC RAM-SOI |
| HX6356XQHT | 32K x 8 STATIC RAM-SOI |
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| HX6356XQFT | 32K x 8 STATIC RAM-SOI |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HX6356XQNT | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:32K x 8 STATIC RAM-SOI |
| HX6356XQRC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:32K x 8 STATIC RAM-SOI |
| HX6356XQRT | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:32K x 8 STATIC RAM-SOI |
| HX6356XSFC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:32K x 8 STATIC RAM-SOI |
| HX6356XSFT | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:32K x 8 STATIC RAM-SOI |
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