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參數(shù)資料
| 型號(hào)： | HX6656RSNT |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 32K x 8 ROM-SOI |
| 中文描述： | 32K的× 8 ROM的絕緣硅 |
| 文件頁(yè)數(shù)： | 7/12頁(yè) |
| 文件大?。?/td> | 155K |
| 代理商： | HX6656RSNT |
HX6656
4
VDD
Positive Supply Voltage (2)
-0.5
7.0
V
VPIN
Voltage on Any Pin (2)
-0.5
VDD+0.5
V
TSTORE
Storage Temperature (Zero Bias)
-65
150
°C
TSOLDER
Soldering Temperature Time
2705
°Cs
PD
Total Package Power Dissipation (3)
2.5
W
IOUT
DC or Average Output Current
25
mA
VPROT
ESD Input Protection Voltage (4)
2000
V
28 FP/36 FP
2
28 DIP
10
TJ
Junction Temperature
175
°C
Parameter
Symbol
ABSOLUTE MAXIMUM RATINGS (1)
Parameter
Max
Symbol
Test Conditions
Worst Case
Units
CAPACITANCE (1)
(1) Stresses in excess of those listed above may result in permanent damage. These are stress ratings only, and operation at these levels is not
implied. Frequent or extended exposure to absolute maximum conditions may affect device reliability.
(2) Voltage referenced to VSS.
(3) ROM power dissipation (IDDSB + IDDOP) plus ROM output driver power dissipation due to external loading must not exceed this specification.
(4) Class 2 electrostatic discharge (ESD) input protection. Tested per MIL-STD-883, Method 3015 by DESC certified lab.
ΘJC
Thermal Resistance (Jct-to-Case)
(1) This parameter is tested during initial design characterization only.
RECOMMENDED OPERATING CONDITIONS
Symbol
Max
Typ
Description
Parameter
Min
°C/W
Units
VDD
Supply Voltage (referenced to VSS)
4.5
5.0
5.5
V
TA
Ambient Temperature
-55
25
125
°C
VPIN
Voltage on Any Pin (referenced to VSS)
-0.3
VDD+0.3
V
Min
Typical
(1)
CI
Input Capacitance
7
pF
VI=VDD or VSS, f=1 MHz
CO
Output Capacitance
9
pF
VIO=VDD or VSS, f=1 MHz
Units
Rating
Min
Max
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